Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers
Wang, Dong, Matsumoto, Koji, Nakamae, Masahiko, Nakashima, Hiroshi
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
Wang, Dong, Ninomiya, Masaharu, Nakamae, Masahiko, Nakashima, Hiroshi
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
Improvement of Oxidation-Induced Ge Condensation Method by H + Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
Sadoh, Taizoh, Matsuura, Ryo, Ninomiya, Masaharu, Nakamae, Masahiko, Enokida, Toyotsugu, Hagino, Hiroyasu, Miyao, Masanobu
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
Structural and electrical evaluation for strained Si/SiGe on insulator
Wang, Dong, Ii, Seiichiro, Ikeda, Ken-ichi, Nakashima, Hideharu, Ninomiya, Masaharu, Nakamae, Masahiko, Nakashima, Hiroshi
Published in Thin solid films (05.06.2006)
Published in Thin solid films (05.06.2006)
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Journal Article
Conference Proceeding
Thickness-dependent stress-relaxation in thin SGOI structures and its improvement
Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Ninomiya, Masaharu, Nakamae, Masahiko, Miyao, Masanobu
Published in Thin solid films (05.06.2006)
Published in Thin solid films (05.06.2006)
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Journal Article
Conference Proceeding
Improved Oxidation-Induced Ge Condensation Technique Using H + Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator
Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Ninomiya, Masaharu, Nakamae, Masahiko, Miyao, Masanobu
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Self-Aligned Technology for Sub-100nm Deep Base Junction Transistors
Nakamae, Masahiko
Published in ESSDERC '87: 17th European Solid State Device Research Conference (01.09.1987)
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Published in ESSDERC '87: 17th European Solid State Device Research Conference (01.09.1987)
Conference Proceeding