Modeling of ion-bombardment damage on Si surfaces for in-line analysis
Matsuda, Asahiko, Nakakubo, Yoshinori, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi
Published in Thin solid films (30.04.2010)
Published in Thin solid films (30.04.2010)
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Journal Article
Conference Proceeding
Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
Eriguchi, Koji, Nakakubo, Yoshinori, Matsuda, Asahiko, Takao, Yoshinori, Ono, Kouichi
Published in Japanese Journal of Applied Physics (01.05.2010)
Published in Japanese Journal of Applied Physics (01.05.2010)
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Journal Article
Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
Nakakubo, Yoshinori, Matsuda, Asahiko, Fukasawa, Masanaga, Takao, Yoshinori, Tatsumi, Tetsuya, Eriguchi, Koji, Ono, Kouichi
Published in Japanese Journal of Applied Physics (01.08.2010)
Published in Japanese Journal of Applied Physics (01.08.2010)
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Journal Article
Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal--Oxide--Semiconductor Field-Effect Transistors
Eriguchi, Koji, Nakakubo, Yoshinori, Matsuda, Asahiko, Kamei, Masayuki, Takao, Yoshinori, Ono, Kouichi
Published in Japanese Journal of Applied Physics (01.08.2010)
Published in Japanese Journal of Applied Physics (01.08.2010)
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Journal Article
Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency
Matsuda, Asahiko, Nakakubo, Yoshinori, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi
Published in Proceedings of 2013 International Conference on IC Design & Technology (ICICDT) (01.05.2013)
Published in Proceedings of 2013 International Conference on IC Design & Technology (ICICDT) (01.05.2013)
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Conference Proceeding
Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal--Oxide--Semiconductor Field-Effect Transistors
Eriguchi, Koji, Nakakubo, Yoshinori, Matsuda, Asahiko, Kamei, Masayuki, Takao, Yoshinori, Ono, Kouichi
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Bias frequency dependence of pn junction charging damage induced by plasma processing
Kamei, Masayuki, Nakakubo, Yoshinori, Eriguchi, Koji, Ono, Kouichi
Published in Thin solid films (30.04.2010)
Published in Thin solid films (30.04.2010)
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Journal Article
Conference Proceeding
SEMICONDUCTOR STORAGE DEVICE
KOMIYA KEN, TOMISHIGE KAZUHIRO, ITO TAKAMASA, YAMAMOTO NAOKI, NAKAKUBO YOSHINORI, HIROTSU YU
Year of Publication 12.03.2020
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Year of Publication 12.03.2020
Patent
Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal--Oxide--Semiconductor Field-Effect Transistors and the Optimization Methodology
Eriguchi, Koji, Nakakubo, Yoshinori, Matsuda, Asahiko, Kamei, Masayuki, Takao, Yoshinori, Ono, Kouichi
Published in Japanese Journal of Applied Physics (01.08.2011)
Published in Japanese Journal of Applied Physics (01.08.2011)
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Journal Article
Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation
Eriguchi, K., Matsuda, A., Nakakubo, Y., Kamei, M., Ohta, H., Ono, K.
Published in IEEE electron device letters (01.07.2009)
Published in IEEE electron device letters (01.07.2009)
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Journal Article
Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs
Eriguchi, K., Nakakubo, Y., Matsuda, A., Takao, Y., Ono, K.
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
SEMICONDUCTOR STORAGE DEVICE
YAMATO MASAKI, YAMAGUCHI TAKESHI, OIDE HIROYUKI, KOBAYASHI SHIGEKI, NAKAKUBO YOSHINORI
Year of Publication 28.09.2015
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Year of Publication 28.09.2015
Patent