High-Etching-Selectivity Barrier SiC ($k<3.5$) Film for 32-nm-Node Copper/Low-$k$ Interconnects
Nakahira, Junya, Nagano, Shuji, Gawase, Akifumi, Ohashi, Yoshi, Shimizu, Hideharu, Chikaki, Shinichi, Oda, Noriaki, Kondo, Seiichi, Hasaka, Satoshi, Saito, Shuichi
Published in Japanese Journal of Applied Physics (01.05.2010)
Published in Japanese Journal of Applied Physics (01.05.2010)
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SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS
KIYOTOSHI MASAHIRO, SHU SOMEI, NAKAHIRA JUNYA, EGUCHI KAZUHIRO, YAMAZAKI SOICHI
Year of Publication 22.01.2004
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Year of Publication 22.01.2004
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METHOD AND DEVICE FOR FORMING METAL OXIDE THIN FILM
KIYOTOSHI MASAHIRO, NAKAHIRA JUNYA, EGUCHI KAZUHIRO, NAKABAYASHI MASAAKI, YAMAZAKI SOICHI
Year of Publication 18.10.2002
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Year of Publication 18.10.2002
Patent