Interfacial structures between aluminum nitride and Cu–P–Sn–Ni brazing alloy with Ti film
Terasaki, Nobuyuki, Kon, Naochika, Chiba, Hajime, Ohashi, Touyou, Nagatomo, Yoshiyuki, Kuromitsu, Yoshirou, Knowles, Kevin M.
Published in Journal of materials science (01.05.2021)
Published in Journal of materials science (01.05.2021)
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A new transient liquid phase bonding method using magnesium foil to bond copper plates to aluminum nitride substrates
Takakuwa, Satoshi, Terasaki, Nobuyuki, Kon, Naochika, Ohashi, Touyou, Nita, Nobuyasu, Nagatomo, Yoshiyuki, Kuromitsu, Yoshirou
Published in Journal of materials science. Materials in electronics (01.05.2022)
Published in Journal of materials science. Materials in electronics (01.05.2022)
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Atomic structures of a liquid-phase bonded metal/nitride heterointerface
Kumamoto, Akihito, Shibata, Naoya, Nayuki, Kei-ichiro, Tohei, Tetsuya, Terasaki, Nobuyuki, Nagatomo, Yoshiyuki, Nagase, Toshiyuki, Akiyama, Kazuhiro, Kuromitsu, Yoshirou, Ikuhara, Yuichi
Published in Scientific reports (10.03.2016)
Published in Scientific reports (10.03.2016)
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Growth mechanism of TiN reaction layers produced on AlN via active metal bonding
Terasaki, Nobuyuki, Sakaguchi, Moe, Chiba, Hajime, Ohashi, Touyou, Nagatomo, Yoshiyuki, Kuromitsu, Yoshirou, Sekino, Tohru, Knowles, Kevin M.
Published in Journal of materials science (01.07.2022)
Published in Journal of materials science (01.07.2022)
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A new method for liquid-phase bonding of copper plates to aluminum nitride (AlN) substrates used in high-power modules
Terasaki, Nobuyuki, Ohashi, Touyou, Nagatomo, Yoshiyuki, Kuromitsu, Yoshirou, Shirzadi, Amir A.
Published in Journal of materials science. Materials in electronics (01.04.2019)
Published in Journal of materials science. Materials in electronics (01.04.2019)
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