Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
Suda, Jun, Yamaji, Kazuki, Hayashi, Yuichirou, Kimoto, Tsunenobu, Shimoyama, Kenji, Namita, Hideo, Nagao, Satoru
Published in Applied physics express (01.10.2010)
Published in Applied physics express (01.10.2010)
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High-quality nonpolar m -plane GaN substrates grown by HVPE
Fujito, Kenji, Kiyomi, Kazumasa, Mochizuki, Tae, Oota, Hirotaka, Namita, Hideo, Nagao, Satoru, Fujimura, Isao
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
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High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds
Tsukada, Yusuke, Enatsu, Yuuki, Kubo, Shuichi, Ikeda, Hirotaka, Kurihara, Kaori, Matsumoto, Hajime, Nagao, Satoru, Mikawa, Yutaka, Fujito, Kenji
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Selective-area growth of GaN on non- and semi-polar bulk GaN substrates
Okada, Shunsuke, Miyake, Hideto, Hiramatsu, Kazumasa, Enatsu, Yuuki, Nagao, Satoru
Published in Japanese Journal of Applied Physics (01.05.2014)
Published in Japanese Journal of Applied Physics (01.05.2014)
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Selective Area Growth of Semipolar ($20\bar{2}1$) and ($20\bar{2}\bar{1}$) GaN Substrates by Metalorganic Vapor Phase Epitaxy
Jinno, Daiki, Ma, Bei, Miyake, Hideto, Hiramatsu, Kazumasa, Enatsu, Yuuki, Nagao, Satoru
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Spatio-Time-Resolved Cathodoluminescence Studies on Freestanding GaN Substrates Grown by Hydride Vapor Phase Epitaxy
Chichibu, Shigefusa F, Ishikawa, Yoichi, Tashiro, Masanori, Hazu, Kouji, Furusawa, Kentaro, Namirta, Hideo, Nagao, Satoru, Fujito, Kenji, Uedono, Akira
Published in ECS transactions (01.04.2013)
Published in ECS transactions (01.04.2013)
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Bulk GaN crystals grown by HVPE
Fujito, Kenji, Kubo, Shuichi, Nagaoka, Hirobumi, Mochizuki, Tae, Namita, Hideo, Nagao, Satoru
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Conference Proceeding
SYSTEM FOR MANUFACTURING METAL MATERIAL AND METHOD OF MANUFACTURING METAL MATERIAL
NAGAO, Satoru, YUKISATO, Takehide, WATANABE, Kunio, SHIKADA, Tsuyoshi
Year of Publication 17.09.2020
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Year of Publication 17.09.2020
Patent
Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AlGaAs/InGaP/GaAs Double Etch Stop Structure
Horie, Hideyoshi, Nagao, Satoru, Shimoyama, Kenji, Fujimori, Toshinari
Published in Japanese Journal of Applied Physics (01.10.1999)
Published in Japanese Journal of Applied Physics (01.10.1999)
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