Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor
Lim, Hajin, Kim, Seongkyung, Kim, Joon Rae, Song, Ji Hun, Lee, Nae-In, Jeong, Jae Kyeong, Kim, Hyeong Joon
Published in Physica status solidi. A, Applications and materials science (01.09.2015)
Published in Physica status solidi. A, Applications and materials science (01.09.2015)
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Journal Article
Technology scaling on High-K & Metal-Gate FinFET BTI reliability
Kyong Taek Lee, Wonchang Kang, Eun-Ae Chung, Gunrae Kim, Hyewon Shim, Hyunwoo Lee, Hyejin Kim, Minhyeok Choe, Nae-In Lee, Patel, Anuj, Junekyun Park, Jongwoo Park
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
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Conference Proceeding
Development of thermal neutron SER-resilient high-k/metal gate technology
Jongwoo Park, Gunrae Kim, Ming Zhang, Kyungsik Park, Miji Lee, Ilgon Kim, Jongsun Bae, Sangwoo Pae, Jinwoo Choi, Dongsuk Shin, Nae-In Lee, Kee Sup Kim
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-pentoxy)silanol
Won, Seok-Jun, Kim, Joon Rae, Suh, Sungin, Lee, Nae-In, Hwang, Cheol Seong, Kim, Hyeong Joon
Published in ACS applied materials & interfaces (25.05.2011)
Published in ACS applied materials & interfaces (25.05.2011)
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Journal Article
Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics
JUNG, Hyung-Suk, LEE, So-Ah, LEE, Nae-In, CHEOL SEONG HWANG, RHA, Sang-Ho, SANG YOUNG LEE, HYO KYEOM KIM, DO HYUN KIM, KYU HWAN OH, PARK, Jung-Min, KIM, Weon-Hong, SONG, Min-Woo
Published in IEEE transactions on electron devices (01.07.2011)
Published in IEEE transactions on electron devices (01.07.2011)
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Journal Article
Properties of Atomic Layer Deposited HfO 2 Films on Ge Substrates Depending on Process Temperatures
Jung, Hyung-Suk, Kim, Hyo Kyeom, Yu, Il-Hyuk, Lee, Sang Young, Lee, Joohwi, Park, Jinho, Jang, Jae Hyuck, Jeon, Sang-Ho, Chung, Yoon Jang, Cho, Deok-Yong, Lee, Nae-In, Park, Tae Joo, Choi, Jung-Hae, Hwang, Cheol Seong
Published in Journal of the Electrochemical Society (2012)
Published in Journal of the Electrochemical Society (2012)
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Journal Article
Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2
Jung, Hyung-Suk, Park, Tae Joo, Kim, Jeong Hwan, Lee, Sang Young, Lee, Joohwi, Oh, Him Chan, Na, Kwang Duck, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In, Hwang, Cheol Seong
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell
Oh, Jung-Hoon, Chung, Hoon-Ju, Lee, Nae-In, Han, Chul-Hi
Published in IEEE electron device letters (01.06.2000)
Published in IEEE electron device letters (01.06.2000)
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Journal Article
Integration Friendly Dual Metal Gate Technology Using Dual Thickness Metal Inserted Poly-Si Stacks (DT-MIPS)
Hyung-Suk Jung, Sung Kee Han, Hajin Lim, Yun Ki Choi, Cheol-kyu Lee, Mong sub Lee, Young-sub You, Youngsu Chung, Jong-bong Park, Eun Ha Lee, Hion Suck Baik, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kang
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
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Conference Proceeding
The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate
Jung, Hyung-Suk, Jeon, Sang Ho, Kim, Hyo Kyeom, Yu, Il-Hyuk, Lee, Sang Young, Lee, Joohwi, Chung, Yoon Jang, Cho, Deok-Yong, Lee, Nae-In, Park, Tae Joo, Choi, Jung-Hae, Han, Seungwu, Hwang, Cheol Seong
Published in ECS journal of solid state science and technology (01.01.2012)
Published in ECS journal of solid state science and technology (01.01.2012)
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Journal Article
Reduction in the Interfacial Trap Density of Al2O3/GaAs Gate Stack by Adopting High Pressure Oxidation
Lim, Hajin, Kim, Seongkyung, Kim, Joon Rae, Suh, Sungin, Song, Ji Hun, Lee, Nae-In, Jeong, Jae Kyeong, Kim, Hyeong Joon
Published in ECS journal of solid state science and technology (01.01.2014)
Published in ECS journal of solid state science and technology (01.01.2014)
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Journal Article
Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma
Lee, Nae-In, Lee, Jin-Woo, Hur, Sung-Hoi, Kim, Hyoung-Sub, Han, Chul-Hi
Published in IEEE electron device letters (01.10.1997)
Published in IEEE electron device letters (01.10.1997)
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Journal Article
Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics
JUNG, Hyung-Suk, RHA, Sang-Ho, SONG, Min-Woo, LEE, Nae-In, HYO KYEOM KIM, JEONG HWAN KIM, WON, Seok-Jun, LEE, Joohwi, SANG YOUNG LEE, CHEOL SEONG HWANG, PARK, Jung-Min, KIM, Weon-Hong
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
Impacts of Zr Composition in \hbox \hbox\hbox Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics
Jung, Hyung-Suk, Lee, So-Ah, Rha, Sang-ho, Lee, Sang Young, Kim, Hyo Kyeom, Kim, Do Hyun, Oh, Kyu Hwan, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In, Hwang, Cheol Seong
Published in IEEE transactions on electron devices (01.07.2011)
Published in IEEE transactions on electron devices (01.07.2011)
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Journal Article
Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics
Jung, Hyung-Suk, Rha, Sang-Ho, Kim, Hyo Kyeom, Kim, Jeong Hwan, Won, Seok-Jun, Lee, Joohwi, Lee, Sang Young, Hwang, Cheol Seong, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
A poly-Si thin-film transistor EEPROM cell with a folded floating gate
Hur, Sung-Hoi, Lee, Nae-In, Lee, Jin-Woo, Han, Chul-Hi
Published in IEEE transactions on electron devices (01.02.1999)
Published in IEEE transactions on electron devices (01.02.1999)
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Journal Article
At speed HTOL test for reliability qualification of high speed mobile applications
Jongwoo Park, Da Ahn, Donghee Lee, Jang, E.-S, Wooyeon Kim, Sangchul Shin, Gunrae Kim, Nae-In Lee, Sangwoo Pae
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
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Conference Proceeding