Search Results - "N B, Balamurugan" :: K.UTB vyhledávací portál

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Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs

by Hemalatha, M., Balamurugan, N. B., Suguna, M., Kumar, D. Sriram
Published in SILICON (01.04.2024)

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Influence of Scattering in Near Ballistic Silicon NanoWire Metal-Oxide-Semiconductor Field Effect Transistor

by Arafat, I Sheik, Balamurugan, N B
Published in Journal of nanoscience and nanotechnology (01.06.2016)

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Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects

by Vimala, P., Balamurugan, N. B.
Published in Journal of semiconductors (01.11.2013)

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Modelling the centroid and charge density in double-gate MOSFETs including quantum effects

by Vimala, P., Balamurugan, N.B.
Published in International journal of electronics (01.09.2013)

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Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET

by Suveetha Dhanaselvam, P., Balamurugan, N. B.
Published in Journal of computational electronics (01.06.2014)

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Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric

by Chandra, S. Theodore, Balamurugan, N. B.
Published in Journal of semiconductors (01.04.2014)

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Analytical modelling and simulation of single-gate SOI TFET for low-power applications

by Arun Samuel, T.S., Balamurugan, N.B., Bhuvaneswari, S., Sharmila, D., Padmapriya, K.
Published in International journal of electronics (03.06.2014)

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The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFET

by Manikandan, S., Balamurugan, N. B.
Published in Journal of computational electronics (01.06.2020)

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Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications

by Venkatesh, M., Balamurugan, N. B.
Published in SILICON (2021)

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Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method

by Preethi, S., Balamurugan, N. B.
Published in SILICON (01.09.2021)

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Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications

by Venkatesh, M., Suguna, M., Balamurugan, N. B.
Published in Journal of electronic materials (01.10.2019)

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Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach

by Vimala, P., Balamurugan, N. B.
Published in Journal of semiconductors (01.03.2012)

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A Physics Based Threshold Voltage Modeling of Trigate Junctionless FinFETs Considering Gaussian Doping

by Manikandan, S., Balamurugan, N. B.
Published in SILICON (01.06.2022)

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Analytical modeling and simulation of germanium single gate silicon on insulator TFET

by Arun Samuel, T. S., Balamurugan, N. B.
Published in Journal of semiconductors (01.03.2014)

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Influence of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET for Improved Analog/RF Performance

by Venkatesh, M., Suguna, M., Balamurugan, N. B.
Published in SILICON (01.12.2020)

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Triple Metal Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System

by Priya, G. Lakshmi, Venkatesh, M., Balamurugan, N. B., Samuel, T. S. Arun
Published in SILICON (01.05.2021)

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Analytical Model of Double Gate Stacked Oxide Junctionless Transistor Considering Source/Drain Depletion Effects for CMOS Low Power Applications

by Manikandan, S., Balamurugan, N. B., Nirmal, D.
Published in SILICON (01.09.2020)

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Investigation of Ambipolar Conduction and RF Stability Performance in Novel Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate TFET

by Venkatesh, M., Priya, G. Lakshmi, Balamurugan, N. B.
Published in SILICON (01.03.2021)

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Improvement of Subthreshold Characteristics of Dopingless Tunnel FET Using Hetero Gate Dielectric Material: Analytical Modeling and Simulation

by G, Lakshmi Priya, N B, Balamurugan
Published in SILICON (01.09.2020)

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Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

by Kandasamy, Sowmya, N.B., Balamurugan
Published in International journal of numerical modelling (01.05.2019)

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