Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric
Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, Sung-Yool Choi
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01.09.2016)
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01.09.2016)
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Conference Proceeding
Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric
Woo, Myung Hun, Jang, Byung Chul, Choi, Junhwan, Lee, Khang June, Shin, Gwang Hyuk, Seong, Hyejeong, Im, Sung Gap, Choi, Sung‐Yool
Published in Advanced functional materials (17.11.2017)
Published in Advanced functional materials (17.11.2017)
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Journal Article
Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide
Shin, Gwang Hyuk, Kim, Choong-Ki, Bang, Gyeong Sook, Kim, Jong Yun, Jang, Byung Chul, Koo, Beom Jun, Woo, Myung Hun, Choi, Yang-Kyu, Choi, Sung-Yool
Published in 2d materials (01.08.2016)
Published in 2d materials (01.08.2016)
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Journal Article
Memory Devices: Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric (Adv. Funct. Mater. 43/2017)
Woo, Myung Hun, Jang, Byung Chul, Choi, Junhwan, Lee, Khang June, Shin, Gwang Hyuk, Seong, Hyejeong, Im, Sung Gap, Choi, Sung‐Yool
Published in Advanced functional materials (17.11.2017)
Published in Advanced functional materials (17.11.2017)
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Journal Article
Low‐Power Nonvolatile Charge Storage Memory Based on MoS 2 and an Ultrathin Polymer Tunneling Dielectric
Woo, Myung Hun, Jang, Byung Chul, Choi, Junhwan, Lee, Khang June, Shin, Gwang Hyuk, Seong, Hyejeong, Im, Sung Gap, Choi, Sung‐Yool
Published in Advanced functional materials (01.11.2017)
Published in Advanced functional materials (01.11.2017)
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Journal Article
Memory Devices: Low‐Power Nonvolatile Charge Storage Memory Based on MoS 2 and an Ultrathin Polymer Tunneling Dielectric (Adv. Funct. Mater. 43/2017)
Woo, Myung Hun, Jang, Byung Chul, Choi, Junhwan, Lee, Khang June, Shin, Gwang Hyuk, Seong, Hyejeong, Im, Sung Gap, Choi, Sung‐Yool
Published in Advanced functional materials (01.11.2017)
Published in Advanced functional materials (01.11.2017)
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Journal Article
First-principles study of the conduction mechanism in tantala-based resistive memory devices
Lee, Juho, Kim, Seunghyun, Kim, Hyoseok, Hong, Sungduk, Kim, Sung Jin, Sin Kim, Dae, Woo, Myung Hun, Heon Kang, Joo, Park, Hyun-Mog, Ha, Daewon
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
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Conference Proceeding
Multilevel resistive switching nonvolatile memory based on MoS sub(2) nanosheet-embedded graphene oxide
Shin, Gwang Hyuk, Kim, Choong-Ki, Bang, Gyeong Sook, Kim, Jong Yun, Jang, Byung Chul, Koo, Beom Jun, Woo, Myung Hun, Choi, Yang-Kyu, Choi, Sung-Yool
Published in 2d materials (01.09.2016)
Published in 2d materials (01.09.2016)
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Journal Article
Multilevel resistive switching nonvolatile memory based on MoS 2 nanosheet-embedded graphene oxide
Shin, Gwang Hyuk, Kim, Choong-Ki, Bang, Gyeong Sook, Kim, Jong Yun, Jang, Byung Chul, Koo, Beom Jun, Woo, Myung Hun, Choi, Yang-Kyu, Choi, Sung-Yool
Published in 2d materials (01.08.2016)
Published in 2d materials (01.08.2016)
Get full text
Journal Article