Characterization of MOSFETs fabricated on large-grain polysilicon on insulator
Jagar, Singh, Chan, Mansun, Wang, Hongmei, Poon, Vincent M.C., Myasnikov, A.M.
Published in Solid-state electronics (01.05.2001)
Published in Solid-state electronics (01.05.2001)
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Journal Article
SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer
Poon, M.C, Gao, Y, Kok, T.C.W, Myasnikov, A.M, Wong, H
Published in Microelectronics and reliability (01.12.2001)
Published in Microelectronics and reliability (01.12.2001)
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Journal Article
Distribution of impurities implanted in InSb and InAs before and after annealing
Gerasimenko, N.N., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I., Verner, I.V.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.1997)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.1997)
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Journal Article
SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing
Gerasimenko, N.N., Khryashchev, G.S., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.1996)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.1996)
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Journal Article
Direct electrical characterization of metal-induced-lateral-crystallization regions by spreading resistance probe measurements
Leung, T.C., Cheng, C.F., Myasnikov, A.M., Poon, M.C.
Published in Proceedings 2001 IEEE Hong Kong Electron Devices Meeting (Cat. No.01TH8553) (2001)
Published in Proceedings 2001 IEEE Hong Kong Electron Devices Meeting (Cat. No.01TH8553) (2001)
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