Nucleation and growth kinetics of GaAs during molecular beam epitaxy
Karpov, S.Yu, Kovalchuk, Yu.V., Myachin, V.E., Pogorelsky, Yu.V.
Published in Surface science (10.07.1994)
Published in Surface science (10.07.1994)
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Journal Article
Thermal etching of binary and ternary III–V compounds under vacuum conditions
Alexeev, A.N., Karpov, S.Yu, Maiorov, M.A., Myachin, V.E., Pogorelsky, Yu.V., Sokolov, I.A.
Published in Journal of crystal growth (01.09.1996)
Published in Journal of crystal growth (01.09.1996)
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Journal Article
Time-resolved reflection high energy electron diffraction study of dynamical surface processes during molecular beam epitaxy of GaAs and AlAs
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Journal Article
Conference Proceeding
Instability of III–V compound surfaces due to liquid phase formation
Karpov, S.Yu, Kovalchuk, Yu.V., Myachin, V.E., Pogorelskii, Yu.V.
Published in Journal of crystal growth (01.04.1993)
Published in Journal of crystal growth (01.04.1993)
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Journal Article
Use of molecular beam epitaxy for high-power AlGaAs laser production
Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu, Shkurko, A.P., Ter-Martirosyan, A.L.
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
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Journal Article