On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)
Schroeder, T., Zaumseil, P., Weidner, G., Wenger, Ch, Dabrowski, J., Müssig, H.-J., Storck, P.
Published in Journal of applied physics (01.01.2006)
Published in Journal of applied physics (01.01.2006)
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Journal Article
Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization
Lupina, G., Schroeder, T., Dabrowski, J., Wenger, Ch, Mane, A. U., Müssig, H.-J., Hoffmann, P., Schmeisser, D.
Published in Journal of applied physics (01.06.2006)
Published in Journal of applied physics (01.06.2006)
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Journal Article
Atomic Vapor Deposition of Strontium Tantalate Films for MIM Applications
Lukosius, M., Wenger, C., Pasko, S., Costina, I., Dabrowski, J., Sorge, R., Mussig, H.-J., Lohe, C.
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Initial stages of praseodymium oxide film formation on Si( [formula omitted])
Müssig, H.-J., Da̧browski, J., Ignatovich, K., Liu, J.P., Zavodinsky, V., Osten, H.J.
Published in Surface science (20.04.2002)
Published in Surface science (20.04.2002)
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Journal Article
Epitaxial, high- K dielectrics on silicon: the example of praseodymium oxide
Osten, H.J., Liu, J.P., Müssig, H.-J., Zaumseil, P.
Published in Microelectronics and reliability (01.07.2001)
Published in Microelectronics and reliability (01.07.2001)
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Journal Article
Can Si(113) wafers be an alternative to Si(001)?
Müssig, H.-J., Dabrowski, J., Ehwald, K.-E., Gaworzewski, P., Huber, A., Lambert, U.
Published in Microelectronic engineering (01.05.2001)
Published in Microelectronic engineering (01.05.2001)
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Journal Article
Conference Proceeding
First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics
Wenger, Ch, Dąbrowski, J., Zaumseil, P., Sorge, R., Formanek, P., Lippert, G., Müssig, H.-J.
Published in Materials science in semiconductor processing (01.01.2004)
Published in Materials science in semiconductor processing (01.01.2004)
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Journal Article
The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors
WENGER, Ch, LUKOSIUS, M, WEIDNER, G, MÜSSIG, H.-J, PASKO, S, LOHE, Ch
Published in Thin solid films (01.10.2009)
Published in Thin solid films (01.10.2009)
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Conference Proceeding
Journal Article
Epitaxial growth of praseodymium oxide on silicon
Osten, H.J, Liu, J.P, Bugiel, E, Müssig, H.J, Zaumseil, P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
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Journal Article
Conference Proceeding
Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
WENGER, Ch, LUKOSIUS, M, COSTINA, I, SORGE, R, DABROWSKI, J, MÜSSIG, H.-J, PASKO, S, LOHE, Ch
Published in Microelectronic engineering (01.08.2008)
Published in Microelectronic engineering (01.08.2008)
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Journal Article
Separation of the bulk and surface components in Auger electron spectroscopy
Arabczyk, W., Müssig, H.-J., Dąbrowski, J., Moszyński, D., Hinrich, S.
Published in Applied surface science (01.09.1998)
Published in Applied surface science (01.09.1998)
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Journal Article
Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications
Łupina, G., Seifarth, O., Kozłowski, G., Dudek, P., Dąbrowski, J., Lippert, G., Müssig, H.-J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Conference Proceeding
A unified microscopic mechanism for donor deactivation in Si
Baierle, R, Caldas, M.J, Da̧browski, J, Müssig, H.-J, Zavodinsky, V
Published in Physica. B, Condensed matter (01.12.1999)
Published in Physica. B, Condensed matter (01.12.1999)
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Journal Article
Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications
LUKOSIUS, M, WENGER, Ch, SCHROEDER, T, DABROWSKI, J, SORGE, R, COSTINA, I, MÜSSIG, H.-J, PASKO, S, LOHE, Ch
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
Journal Article