A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput
Sako, M., Nakajima, T., Kono, F., Nakano, T., Fujiu, M., Musha, J., Nakamura, D., Kanagawa, N., Shimizu, Y., Yanagidaira, K., Utsumi, T., Kawano, T., Hosomura, Y., Yabe, H., Kano, M., Sugawara, H., Sravan, A. H., Hayashi, K., Kouchi, T., Watanabe, Y.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Get full text
Conference Proceeding
13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology
Shibata, N., Kanda, K., Shimizu, T., Nakai, J., Nagao, O., Kobayashi, N., Miakashi, M., Nagadomi, Y., Nakano, T., Kawabe, T., Shibuya, T., Sako, M., Yanagidaira, K., Hashimoto, T., Date, H., Sato, M., Nakagawa, T., Takamoto, H., Musha, J., Minamoto, T., Uda, M., Nakamura, D., Sakurai, K., Yamashita, T., Zhou, J., Tachibana, R., Takagiwa, T., Sugimoto, T., Ogawa, M., Ochi, Y., Kawaguchi, K., Kojima, M., Ogawa, T., Hashiguchi, T., Fukuda, R., Masuda, M., Kawakami, K., Someya, T., Kajitani, Y., Matsumoto, Y., Morozumi, N., Sato, J., Raghunathan, N., Koh, Y. L., Chen, S., Lee, J., Nasu, H., Sugawara, H., Hosono, K., Hisada, T., Kaneko, T., Nakamura, H.
Published in 2019 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2019)
Published in 2019 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2019)
Get full text
Conference Proceeding
A 151-mm ^ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
Fukuda, K., Watanabe, Y., Makino, E., Kawakami, K., Sato, J., Takagiwa, T., Kanagawa, N., Shiga, H., Tokiwa, N., Shindo, Y., Ogawa, T., Edahiro, T., Iwai, M., Nagao, O., Musha, J., Minamoto, T., Furuta, Y., Yanagidaira, K., Suzuki, Y., Nakamura, D., Hosomura, Y., Tanaka, R., Komai, H., Muramoto, M., Shikata, G., Yuminaka, A., Sakurai, K., Sakai, M., Hong Ding, Watanabe, M., Kato, Y., Miwa, T., Mak, A., Nakamichi, M., Hemink, G., Lee, D., Higashitani, M., Murphy, B., Bo Lei, Matsunaga, Y., Naruke, K., Hara, T.
Published in IEEE journal of solid-state circuits (01.01.2012)
Published in IEEE journal of solid-state circuits (01.01.2012)
Get full text
Journal Article
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface
Shibata, N., Kanda, K., Hisada, T., Isobe, K., Sato, M., Shimizu, Y., Shimizu, T., Sugimoto, T., Kobayashi, T., Inuzuka, K., Kanagawa, N., Kajitani, Y., Ogawa, T., Nakai, J., Iwasa, K., Kojima, M., Suzuki, T., Suzuki, Y., Sakai, S., Fujimura, T., Utsunomiya, Y., Hashimoto, T., Miakashi, M., Kobayashi, N., Inagaki, M., Matsumoto, Y., Inoue, S., He, D., Honda, Y., Musha, J., Nakagawa, M., Honma, M., Abiko, N., Koyanagi, M., Yoshihara, M., Ino, K., Noguchi, M., Kamei, T., Kato, Y., Zaitsu, S., Nasu, H., Ariki, T., Chibvongodze, H., Watanabe, M., Ding, H., Ookuma, N., Yamashita, R., Liang, G., Hemink, G., Moogat, F., Trinh, C., Higashitani, M., Pham, T., Kanazawa, K.
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
Get full text
Conference Proceeding
A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology
Fukuda, K, Watanabe, Y, Makino, E, Kawakami, K, Sato, J, Takagiwa, T, Kanagawa, N, Shiga, H, Tokiwa, N, Shindo, Y, Edahiro, T, Ogawa, T, Iwai, M, Nagao, O, Musha, J, Minamoto, T, Yanagidaira, K, Suzuki, Y, Nakamura, D, Hosomura, Y, Komai, H, Furuta, Y, Muramoto, M, Tanaka, R, Shikata, G, Yuminaka, A, Sakurai, K, Sakai, M, Ding, H, Watanabe, M, Kato, Y, Miwa, T, Mak, A, Nakamichi, M, Hemink, G, Lee, D, Higashitani, M, Murphy, B, Lei, B, Matsunaga, Y, Naruke, K, Hara, T
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
Get full text
Conference Proceeding
BIPHENYLMETHANDERIVATE SOWIE DESSEN PHARMAKOLOGISCHE VERWENDUNG
HAMANO,SACHIYUKI,JP, MIYAKE,KAZUTOSHI,JP, MORI,NOBUYUKI,JP, YONEDA,NAOKI,JP, HIROSHIMA,OSAMU,JP, MUSHA,TAKASHI,JP, MINAMI,NORIO,JP, MATSUOKA,TOSHIYUKI,JP, MASUKURA,MASAYUKI,JP, ISHIHARA,HIROKI,JP
Year of Publication 09.04.1992
Get full text
Year of Publication 09.04.1992
Patent
PROCESS FOR PRODUCING BIPHENYLMETHANE DERIVATIVES INCLUDING CONDENSED CARBO OR HETEROCYCLIC IMIDAZOLE UNIT, AS WELL AS PHARMACEUTICAL COMPOSITIONS COMPRISING SUCH COMPOUNDS
HAMANO,SACHIYUKI,JP, MIYAKE,KAZUTOSHI,JP, MORI,NOBUYUKI,JP, YONEDA,NAOKI,JP, HIROSHIMA,OSAMU,JP, MATSUKURA,MASAYUKI,JP, MUSHA,TAKASHI,JP, MINAMI,NORIO,JP, MATSUOKA,TOSHIYUKI,JP, ISHIHARA,HIROKI,JP
Year of Publication 28.05.1991
Get full text
Year of Publication 28.05.1991
Patent
DE3722425
UJIHARA, TOSHIHIDE, HITACHI, JP, SAKAUE, TADASHI, SAKURADA, SHUROKU, KATSUTA, JP, MUSHA, SHUJI, HITACHI, JP
Year of Publication 15.10.1992
Get full text
Year of Publication 15.10.1992
Patent