Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating
Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo
Published in Thin solid films (01.04.2014)
Published in Thin solid films (01.04.2014)
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Conference Proceeding
Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode
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Conference Proceeding
Behavior of N atoms after thermal nitridation of Si1−xGex surface
Kawashima, Tomoyuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD
Nosaka, Takayuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi
Published in Thin solid films (2010)
Published in Thin solid films (2010)
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Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD
Sakuraba, Masao, Muto, Daisuke, Mori, Masaki, Sugawara, Katsutoshi, Murota, Junichi
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition
Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi
Published in Applied surface science (30.07.2008)
Published in Applied surface science (30.07.2008)
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Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system
Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi
Published in Solid-state electronics (01.08.2009)
Published in Solid-state electronics (01.08.2009)
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(Invited) Atomically Controlled Processing for Si and Ge CVD Epitaxial Growth
Murota, Junichi, Yamamoto, Yuji, Costina, Ioan, Tillack, Bernd, Le Thanh, Vinh, Loo, Roger, Caymax, Matty
Published in ECS transactions (26.04.2016)
Published in ECS transactions (26.04.2016)
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Strain relaxation by stripe patterning in Si/Si1-xGex/Si(100) heterostructures
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Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0)
AKIYAMA, Nao, SAKURABA, Masao, TILLACK, Bernd, MUROTA, Junichi
Published in Applied surface science (01.07.2008)
Published in Applied surface science (01.07.2008)
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