Study of TaN-Gated p-GaN E-Mode HEMT
Baby, Rijo, Reshma, K., Chandrasekar, Hareesh, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
Fabrication and Switching Performance of 8 A–500 V D‐Mode GaN MISHEMTs
Baby, Rijo, Roy, Shamibrota K., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Basu, Kaushik, Raghavan, Srinivasan, Nath, Digbijoy N.
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
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Journal Article
Optical properties of mist CVD grown α-Ga2O3
Muazzam, Usman Ul, Chavan, Prasad, Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N
Published in IEEE photonics technology letters (01.04.2020)
Published in IEEE photonics technology letters (01.04.2020)
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Journal Article
High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3
Mech, Roop K., Mohta, Neha, Chatterjee, Avijit, Selvaraja, Shankar Kumar, Muralidharan, Rangarajan, Nath, Digbijoy N.
Published in Physica status solidi. A, Applications and materials science (01.03.2020)
Published in Physica status solidi. A, Applications and materials science (01.03.2020)
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Journal Article
Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model
Remesh, Nayana, Mohan, Nagaboopathy, Kumar, Sandeep, Prabhu, Shreesha, Guiney, Ivor, Humphreys, Colin J., Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Journal Article
A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
Remesh, Nayana, Kumar, Sandeep, Guiney, Ivor, Humphreys, Colin J., Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N.
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors
Kumar, Sandeep, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim
Published in Physica status solidi. A, Applications and materials science (01.03.2020)
Published in Physica status solidi. A, Applications and materials science (01.03.2020)
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Journal Article
Investigation of Ta2O5 as an Alternative High- Dielectric for InAlN/GaN MOS-HEMT on Si
Kumar, Sandeep, Kumar, Himanshu, Vura, Sandeep, Pratiyush, Anamika Singh, Charan, Vanjari Sai, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.03.2019)
Published in IEEE transactions on electron devices (01.03.2019)
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Journal Article
Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates
Chandrasekar, Hareesh, Kumar, Sandeep, Ganapathi, Kolla Lakshmi, Prabhu, Shreesha, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Raghavan, Srinivasan, Bhat, K. N., Mohan, Sangeneni, Muralidharan, Rangarajan, Bhat, Navakanta, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.09.2018)
Published in IEEE transactions on electron devices (01.09.2018)
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Journal Article
Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader
Nittala, Pavani Vamsi Krishna, Remesh, Nayana, S, Niranjan, Tasneem, Saba, Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N., Sen, Prosenjit
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01.02.2020)
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01.02.2020)
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Journal Article
Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness
Mishra, Manna Kumari, Sharma, Rajesh K., Manchanda, Rachna, Bag, Rajesh K., Thakur, Om Prakash, Muralidharan, Rangarajan
Published in AIP advances (01.09.2014)
Published in AIP advances (01.09.2014)
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Journal Article
Comprehensive Study of Optical Float-Zone Grown Gallium Oxide Schottky Barrier Diode
Sahoo, Jyotiranjan, Vijayakumar, P., Saquib, Taha, Suganya, M., Ganesamoorthy, S., Muralidharan, Rangarajan, Nath, Digbijoy N
Published in 2023 9th IEEE India International Conference on Power Electronics (IICPE) (28.11.2023)
Published in 2023 9th IEEE India International Conference on Power Electronics (IICPE) (28.11.2023)
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Conference Proceeding
AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications
Gowrisankar, Aniruddhan, Vanjari, Sai Charan, Bardhan, Abheek, Venugopalarao, Anirudh, Chandrasekar, Hareesh, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.
Published in 2022 IEEE International Conference on Emerging Electronics (ICEE) (11.12.2022)
Published in 2022 IEEE International Conference on Emerging Electronics (ICEE) (11.12.2022)
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Conference Proceeding
Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD
Ul Muazzam, Usman, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.
Published in Optical materials (01.11.2023)
Published in Optical materials (01.11.2023)
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Journal Article