Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure
Munde, M S, Mehonic, A, Ng, W H, Buckwell, M, Montesi, L, Bosman, M, Shluger, A L, Kenyon, A J
Published in Scientific reports (24.08.2017)
Published in Scientific reports (24.08.2017)
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Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
Mehonic, A., Munde, M.S., Ng, W.H., Buckwell, M., Montesi, L., Bosman, M., Shluger, A.L., Kenyon, A.J.
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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Journal Article