Temperature dependent optical properties of self-organized InAs/GaAs quantum dots
Heitz, R, Mukhametzhanov, I, Madhukar, A, Hoffmann, A, Bimberg, D
Published in Journal of electronic materials (01.05.1999)
Published in Journal of electronic materials (01.05.1999)
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Journal Article
Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots
Mukhametzhanov, I., Chen, Z.H., Baklenov, O., Kim, E.T., Madhukar, A.
Published in Physica status solidi. B. Basic research (01.04.2001)
Published in Physica status solidi. B. Basic research (01.04.2001)
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Conference Proceeding
Excited States of InAs/GaAs Quantum Dots
Heitz, R., Guffarth, F., Mukhametzhanov, I., Stier, O., Madhukar, A., Bimberg, D.
Published in Physica status solidi. B. Basic research (01.03.2001)
Published in Physica status solidi. B. Basic research (01.03.2001)
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Journal Article
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InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region
CHEN, Z. H, BAKLENOV, O, KIM, E. T, MUKHAMETZHANOV, I, TIE, J, MADHUKAR, A, YE, Z, CAMPBELL, J. C
Published in Infrared physics & technology (01.06.2001)
Published in Infrared physics & technology (01.06.2001)
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Journal Article
Phonon-assisted polar exciton–transitions in self-organized InAs/GaAs quantum dots
Heitz, R, Mukhametzhanov, I, Stier, O, Madhukar, A, Bimberg, D
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2000)
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2000)
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Coherent control and angular momentum transfer in semiconductor and plasmonic nanostructures
Akimov, I. A., Yakovlev, D. R., Bayer, M., Rotenberg, N., Kuipers, L., Kukushkin, V. I., Kukushkin, I. V., Mukhametzhanov, I. M., Kulakovskii, V. D., Parker, M., Lopez-Garcia, M., Rarity, J. G., Oulton, R., Schneider, C., Hofling, S., Kamp, M.
Published in 2015 17th International Conference on Transparent Optical Networks (ICTON) (01.07.2015)
Published in 2015 17th International Conference on Transparent Optical Networks (ICTON) (01.07.2015)
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Conference Proceeding
Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region
Chen, Zhonghui, Baklenov, O., Kim, E. T., Mukhametzhanov, I., Tie, J., Madhukar, A., Ye, Z., Campbell, J. C.
Published in Journal of applied physics (15.04.2001)
Published in Journal of applied physics (15.04.2001)
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Journal Article
Excitation transfer in novel self-organized quantum dot structures
Heitz, R., Mukhametzhanov, I., Zeng, J., Chen, P., Madhukar, A, Bimberg, D.
Published in Superlattices and microstructures (01.01.1999)
Published in Superlattices and microstructures (01.01.1999)
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Giant growth of quantum oscillations in an inhomogeneous 2D electron system
Dolgopolov, V. T., Shashkin, A. A., Kravchenko, G. V., Mukhametzhanov, I. M., Wendel, M., Kotthaus, J. P., Molenkamp, L. W., Foxon, C. T.
Published in JETP letters (10.01.1996)
Published in JETP letters (10.01.1996)
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Journal Article
Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence
Tang, Y., Rich, D. H., Mukhametzhanov, I., Chen, P., Madhukar, A.
Published in Journal of applied physics (15.09.1998)
Published in Journal of applied physics (15.09.1998)
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Journal Article
InAs/Al xGa 1− xAs quantum dot infrared photodetectors with undoped active region
Chen, Z.H, Baklenov, O, Kim, E.T, Mukhametzhanov, I, Tie, J, Madhukar, A, Ye, Z, Campbell, J.C
Published in Infrared physics & technology (2001)
Published in Infrared physics & technology (2001)
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Journal Article
On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum ☐es
Madhukar, A., Ramachandran, T.R., Konkar, A., Mukhametzhanov, I., Yu, W., Chen, P.
Published in Applied surface science (01.01.1998)
Published in Applied surface science (01.01.1998)
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Journal Article
On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum boxes
MADHUKAR, A, RAMACHANDRAN, T. R, KONKAR, A, MUKHAMETZHANOV, I, YU, W, CHEN, P
Published in Applied surface science (1998)
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Published in Applied surface science (1998)
Conference Proceeding
Dark current reduction and operational wavelength shift in normal incidence InAs-GaAs QDIPs through the introduction of AlGaAs layers in the active region of the detector
Baklenov, O., Chen, Z.H., Kim, E.T., Mukhametzhanov, I., Madhukar, A., Ma, F., Ye, Z., Yang, B., Campbell, J.
Published in 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) (2000)
Published in 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) (2000)
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