The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors
WENGER, Ch, LUKOSIUS, M, WEIDNER, G, MÜSSIG, H.-J, PASKO, S, LOHE, Ch
Published in Thin solid films (01.10.2009)
Published in Thin solid films (01.10.2009)
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Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
WENGER, Ch, LUKOSIUS, M, COSTINA, I, SORGE, R, DABROWSKI, J, MÜSSIG, H.-J, PASKO, S, LOHE, Ch
Published in Microelectronic engineering (01.08.2008)
Published in Microelectronic engineering (01.08.2008)
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Journal Article
Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications
Łupina, G., Seifarth, O., Kozłowski, G., Dudek, P., Dąbrowski, J., Lippert, G., Müssig, H.-J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications
LUKOSIUS, M, WENGER, Ch, SCHROEDER, T, DABROWSKI, J, SORGE, R, COSTINA, I, MÜSSIG, H.-J, PASKO, S, LOHE, Ch
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Process integration of Pr-based high- k gate dielectrics
Mane, A.U., Wenger, Ch, Lupina, G., Schroeder, T., Lippert, G., Sorge, R., Zaumseil, P., Weidner, G., Dabrowski, J., Müssig, H.-J.
Published in Microelectronic engineering (01.10.2005)
Published in Microelectronic engineering (01.10.2005)
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Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
Schroeder, T, Zaumseil, P, Seifarth, O, Giussani, A, Müssig, H-J, Storck, P, Geiger, D, Lichte, H, Dabrowski, J
Published in New journal of physics (07.11.2008)
Published in New journal of physics (07.11.2008)
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Journal Article
Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films
Dąbrowski, J., Lippert, G., Oberbeck, L., Schröder, U., Costina, I., Łupina, G., Ratzke, M., Zaumseil, P., Müssig, H.-J.
Published in Journal of the Electrochemical Society (2008)
Published in Journal of the Electrochemical Society (2008)
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Journal Article
Atomic Vapor Deposition of Strontium Tantalate Films for MIM Applications
Lukosius, M., Wenger, C., Pasko, S., Costina, I., Dabrowski, J., Sorge, R., Mussig, H.-J., Lohe, C.
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Structural models for Sb on Si(113): an experimental and theoretical STM study
Wolff, G., Müssig, H.-J., Da̧browski, J., Arabczyk, W., Hinrich, S.
Published in Surface science (20.06.1996)
Published in Surface science (20.06.1996)
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Electron spectroscopy studies on carbon segregation from a mono-crystalline α-Fe(111) specimen
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Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics
Schwalke, U., Boye, K., Hess, G., Muller, G., Haberle, K., Heller, R., Rulan, T., Tzschockel, G., Osten, J., Fissel, A., Mussig, H.-J.
Published in 32nd European Solid-State Device Research Conference (2002)
Published in 32nd European Solid-State Device Research Conference (2002)
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Conference Proceeding
The reconstruction of the Si(113) surface studied by scanning tunneling microscope
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Conference Proceeding
Initial stages of praseodymium oxide film formation on Si( [formula omitted])
Müssig, H.-J., Da̧browski, J., Ignatovich, K., Liu, J.P., Zavodinsky, V., Osten, H.J.
Published in Surface science (20.04.2002)
Published in Surface science (20.04.2002)
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Epitaxial, high- K dielectrics on silicon: the example of praseodymium oxide
Osten, H.J., Liu, J.P., Müssig, H.-J., Zaumseil, P.
Published in Microelectronics and reliability (01.07.2001)
Published in Microelectronics and reliability (01.07.2001)
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