A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications
Latry, O., Dherbécourt, P., Mourgues, K., Maanane, H., Sipma, J.P., Cornu, F., Eudeline, P., Masmoudi, M.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
Conference Proceeding
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application
Lachéze, L., Latry, O., Dherbécourt, P., Mourgues, K., Purohit, V., Maanane, H., Sipma, J.P., Cornu, F., Eudeline, P.
Published in Microelectronics and reliability (01.08.2011)
Published in Microelectronics and reliability (01.08.2011)
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Journal Article
Hot carrier reliability of RF N- LDMOS for S Band radar application
Gares, M., Maanane, H., Masmoudi, M., Bertram, P., Marcon, J., Belaid, M.A., Mourgues, K., Tolant, C., Eudeline, P.
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Journal Article
Conference Proceeding
Study of hot-carrier effects on power RF LDMOS device reliability
Gares, M., Belaïd, M.A., Maanane, H., Masmoudi, M., Marcon, J., Mourgues, K., Eudeline, Ph
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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Conference Proceeding
High mobility thin film transistors by Nd:YVO4-laser crystallization
Helen, Y., Dassow, R., Nerding, M., Mourgues, K., Raoult, F., Köhler, J.R., Mohammed-Brahim, T., Rogel, R., Bonnaud, O., Werner, J.H., Strunk, H.P.
Published in Thin solid films (15.02.2001)
Published in Thin solid films (15.02.2001)
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Conference Proceeding
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability
Belaïd, M.A., Ketata, K., Mourgues, K., Maanane, H., Masmoudi, M., Marcon, J.
Published in Microelectronics and reliability (01.09.2005)
Published in Microelectronics and reliability (01.09.2005)
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Conference Proceeding
Study of RF N − LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF
Maanane, H., Masmoudi, M., Marcon, J., Belaid, M.A., Mourgues, K., Tolant, C., Ketata, K., Eudeline, Ph
Published in Microelectronics and reliability (01.05.2006)
Published in Microelectronics and reliability (01.05.2006)
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Journal Article
Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise
Mercha, A., Pichon, L., Carin, R., Mourgues, K., Bonnaud, O.
Published in Thin solid films (01.02.2001)
Published in Thin solid films (01.02.2001)
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Journal Article
Conference Proceeding
Reliability study of Power RF LDMOS for Radar Application
MAANANE, H, BERTRAM, P, MARCON, J, MASMOUDI, M, BELAID, M, MOURGUES, K, EUDELINE, P, KETATA, K
Published in Microelectronics and reliability (01.09.2004)
Published in Microelectronics and reliability (01.09.2004)
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Journal Article
Conference Proceeding
Single shot excimer laser crystallization and LPCVD silicon TFTs
Helen, Y, Mourgues, K, Raoult, F, Mohammed-Brahim, T, Bonnaud, O, Rogel, R, Prochasson, S, Boher, P, Zahorski, D
Published in Thin solid films (11.01.1999)
Published in Thin solid films (11.01.1999)
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Conference Proceeding
Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
Mourgues, K, Rahal, A, Mohammed-Brahim, T, Sarret, M, Kleider, J.P, Longeaud, C, Bachrouri, A, Romano-Rodriguez, A
Published in Journal of non-crystalline solids (01.05.2000)
Published in Journal of non-crystalline solids (01.05.2000)
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Journal Article
Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization
Pichon, L, Mourgues, K, Raoult, F, Mohammed-Brahim, T, Kis-Sion, K, Briand, D, Bonnaud, O
Published in Semiconductor science and technology (01.11.2001)
Published in Semiconductor science and technology (01.11.2001)
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Journal Article
Laser crystallization of silicon for high-performance thin-film transistors
Dassow, R, Köhler, J R, Helen, Y, Mourgues, K, Bonnaud, O, Mohammed-Brahim, T, Werner, J H
Published in Semiconductor science and technology (01.10.2000)
Published in Semiconductor science and technology (01.10.2000)
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Journal Article
State creation induced by gate bias stress in unhydrogenated polysilicon TFTs
Tala-Ighil, B., Rahal, A., Mourgues, K., Toutah, A., Pichon, L., Mohammed-Brahim, T., Raoult, F., Bonnaud, O.
Published in Thin solid films (01.01.1999)
Published in Thin solid films (01.01.1999)
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Conference Proceeding
Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material
Toutah, H., Tala-Ighil, B., Llibre, J.F., Rahal, A., Mourgues, K., Helen, Y., Mohammed-Brahim, T., Dassow, R., Köhler, J.R.
Published in Thin solid films (15.02.2001)
Published in Thin solid films (15.02.2001)
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Journal Article
Conference Proceeding
Stability of polysilicon thin film transistors under switch operating
Toutah, H., Llibre, J.F., Tala-Ighil, B., Mohammed-Brahim, T., Mourgues, K., Helen, Y., Raoult, F., Bonnaud, O.
Published in Microelectronics and reliability (01.08.2000)
Published in Microelectronics and reliability (01.08.2000)
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Journal Article
Reliability study of power RF LDMOS device under thermal stress
Belaïd, M.A., Ketata, K., Mourgues, K., Gares, M., Masmoudi, M., Marcon, J.
Published in Microelectronics (01.02.2007)
Published in Microelectronics (01.02.2007)
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Journal Article
Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors
Tala-Ighil, B., Toutah, H., Rahal, A., Mourgues, K., Pichon, L., Raoult, F., Bonnaud, O., Mohammed-Brahim, T.
Published in Microelectronics and reliability (01.06.1998)
Published in Microelectronics and reliability (01.06.1998)
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