The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography
Guerguis, Bavley, Cuduvally, Ramya, Morris, Richard J.H., Arcuri, Gabriel, Langelier, Brian, Bassim, Nabil
Published in Ultramicroscopy (01.12.2024)
Published in Ultramicroscopy (01.12.2024)
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Journal Article
Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN
Morris, Richard J.H., Cuduvally, Ramya, Lin, Jhao-Rong, Zhao, Ming, Vandervorst, Wilfried, Thuvander, Mattias, Fleischmann, Claudia
Published in Ultramicroscopy (01.11.2022)
Published in Ultramicroscopy (01.11.2022)
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Journal Article
Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantification
Morris, Richard J.H., Cuduvally, Ramya, Melkonyan, Davit, Zhao, Ming, van der Heide, Paul, Vandervorst, Wilfried
Published in Ultramicroscopy (01.11.2019)
Published in Ultramicroscopy (01.11.2019)
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Journal Article
Stoichiometric analysis of superficial Ba doped Strontium Titanium Oxide layers using APT: the case of the missing Oxygen
Morris, Richard J. H., Popovici, Mihaela, Meersschaut, Johan, Scheerder, Jeroen, Goux, Ludovic, Kar, Gouri, Fleischmann, Claudia, Vandervorst, Wilfried, van der Heide, Paul
Published in Microscopy and microanalysis (01.08.2021)
Published in Microscopy and microanalysis (01.08.2021)
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Journal Article
A scheme to correct for inaccuracies in the compositional analysis of SixGe1-x by Atom Probe Tomography
Dialameh, Masoud, Scheerder, Jeroen, Morris, Richard J. H., Meersschaut, Johan, Richard, Olivier, Vandervorst, Wilfried, van der Heide, Paul, Fleischmann, Claudia
Published in Microscopy and microanalysis (01.08.2021)
Published in Microscopy and microanalysis (01.08.2021)
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Journal Article
Significant Oxygen Underestimation When Quantifying Barium-Doped SrTiO Layers by Atom Probe Tomography
Morris, Richard J H, Lin, Jhao-Rong, Scheerder, Jeroen E, Popovici, Mihaela I, Meersschaut, Johan, Goux, Ludovic, Kar, Gouri Sankar, van der Heide, Paul, Fleischmann, Claudia
Published in Microscopy and microanalysis (07.03.2024)
Published in Microscopy and microanalysis (07.03.2024)
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Journal Article
Toward accurate composition analysis of GaN and AlGaN using atom probe tomography
Morris, Richard. J. H., Cuduvally, Ramya, Melkonyan, Davit, Fleischmann, Claudia, Zhao, Ming, Arnoldi, Laurent, van der Heide, Paul, Vandervorst, Wilfried
Published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics (01.05.2018)
Published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics (01.05.2018)
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Journal Article
Evaporation Dynamics of Boron Dopants in Silicon
Op de Beeck, Jonathan, Freysoldt, Christoph, Cuduvally, Ramya, Scheerder, Jeroen, Morris, Richard J. H., van der Heide, Paul, Vandervorst, Wilfried, Fleischmann, Claudia
Published in Microscopy and microanalysis (01.08.2021)
Published in Microscopy and microanalysis (01.08.2021)
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Journal Article
Depth Profiling and Melting of Nanoparticles in Secondary Ion Mass Spectrometry (SIMS)
Yang, Li, Seah, Martin P, Gilmore, Ian S, Morris, Richard J. H, Dowsett, Mark G, Boarino, Luca, Sparnacci, Katia, Laus, Michele
Published in Journal of physical chemistry. C (08.08.2013)
Published in Journal of physical chemistry. C (08.08.2013)
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Journal Article
Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p‑Type Transparent Conducting CuBr Thin Films
Vijayaraghavan, Rajani K, McCoy, Anthony P, Chauhan, Lalit, Cowley, Aidan, Morris, Richard J. H, Daniels, Stephen, McNally, Patrick J
Published in Journal of physical chemistry. C (09.10.2014)
Published in Journal of physical chemistry. C (09.10.2014)
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Journal Article
Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1―xGex/Ge Quantum Well Structures
MORRIS, Richard J. H, DOWSETT, Mark G, BEANLAND, Richard, DOBBIE, Andrew, MYRONOV, Maksym, LEADLEY, David R
Published in Analytical chemistry (Washington) (06.03.2012)
Published in Analytical chemistry (Washington) (06.03.2012)
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Journal Article
Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study
Cuduvally, Ramya, Morris, Richard J H, Oosterbos, Giel, Ferrari, Piero, Fleischmann, Claudia, bes, Richard G, Vandervorst, Wilfried
Published in arXiv.org (11.07.2022)
Published in arXiv.org (11.07.2022)
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Journal Article
Elastic backscattering during boron implantation in Si1-xGex
Bai, Quan, Dialameh, Masoud, Morris, Richard J.H., Vickridge, Ian, Vantomme, André, Meersschaut, Johan
Published in Vacuum (2024)
Published in Vacuum (2024)
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Journal Article
Developing the Metrology for Atomic Level Spatial Distribution and Local Chemistry Analysis of in-Situ Dopants By Atom Probe Tomography
Lin, Jhao-Rong, Morris, Richard J. H., Scheerder, Jeroen E., Hikavyy, Andriy Yakovitch, Porret, Clement, Vantomme, André, Fleischmann, Claudia
Published in ECS transactions (27.09.2024)
Published in ECS transactions (27.09.2024)
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Journal Article
A scheme to correct for inaccuracies in the compositional analysis of Si x Ge 1-x by Atom Probe Tomography
Dialameh, Masoud, Scheerder, Jeroen, Morris, Richard J. H., Meersschaut, Johan, Richard, Olivier, Vandervorst, Wilfried, van der Heide, Paul, Fleischmann, Claudia
Published in Microscopy and microanalysis (01.08.2021)
Published in Microscopy and microanalysis (01.08.2021)
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Journal Article
Low Temperature Epitaxy of In Situ GaDoped Si 1-X Ge x : Dopant Incorporation, Structural and Electrical Properties
Rengo, Gianluca, Porret, Clement, Hikavyy, Andriy Yakovitch, Coenen, Gitte, Ayyad, Mustafa, Morris, Richard J. H., Pollastri, Simone, De Souza, Danilo Oliveira, Grandjean, Didier, Loo, Roger, Vantomme, Andre
Published in ECS transactions (30.09.2022)
Published in ECS transactions (30.09.2022)
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Journal Article
Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties
Rengo, Gianluca, Porret, Clement, Hikavyy, Andriy Yakovitch, Coenen, Gitte, Ayyad, Mustafa, Morris, Richard J. H., Pollastri, Simone, De Souza, Danilo Oliveira, Grandjean, Didier, Loo, Roger, Vantomme, Andre
Published in ECS transactions (30.09.2022)
Published in ECS transactions (30.09.2022)
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Journal Article
B and Ga Co-Doped Si 1−x Ge x for p-Type Source/Drain Contacts
Rengo, Gianluca, Porret, Clement, Hikavyy, Andriy, Rosseel, Erik, Ayyad, Mustafa, Morris, Richard J. H., Khazaka, Rami, Loo, Roger, Vantomme, André
Published in ECS journal of solid state science and technology (01.02.2022)
Published in ECS journal of solid state science and technology (01.02.2022)
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Journal Article
Effect of Strain on the Epitaxy of B-Doped Si 0.5 Ge 0.5 Source/Drain Layers
Rengo, Gianluca, Porret, Clement, Hikavyy, Andriy Yakovitch, Rosseel, Erik, Ayyad, Mustafa, Morris, Richard J. H., Pourtois, Geoffrey, Loo, Roger, Vantomme, Andre
Published in ECS transactions (01.10.2021)
Published in ECS transactions (01.10.2021)
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Journal Article