Study of mechanism of plasma surface modifications in Si by spectroscopic ellipsometry
Yamada, T., Harada, N., Kitahara, K., Moritani, A.
Published in Surface & coatings technology (01.09.2003)
Published in Surface & coatings technology (01.09.2003)
Get full text
Journal Article
Study of plasma-nitriding process in Si with in situ spectroscopic ellipsometry
Yamada, T., Kubo, N., Kitahara, K., Moritani, A.
Published in Surface & coatings technology (02.06.2003)
Published in Surface & coatings technology (02.06.2003)
Get full text
Journal Article
In situ spectroscopic ellipsometry for plasma-carburizing process
Moritani, A, Yamada, T, Kitamura, T, Katayama, H, Noda, Y, Kanayama, N
Published in Thin solid films (17.10.2000)
Published in Thin solid films (17.10.2000)
Get full text
Journal Article
In situ spectroscopic ellipsometry of carbon nucleation and growth on Si in a deposition process by DC glow discharge of methane
Moritani, A., Kitahara, K., Kitamura, T., Katayama, H., Kanayama, N., Suzuki, M.
Published in Thin solid films (15.05.2001)
Published in Thin solid films (15.05.2001)
Get full text
Journal Article
Conference Proceeding
A small-signal linear equivalent circuit of HEMTs fabricated on GaAs-on-Si wafers
Goto, M, Ohta, Y, Aigo, T, Moritani, A
Published in IEEE transactions on microwave theory and techniques (01.05.1996)
Published in IEEE transactions on microwave theory and techniques (01.05.1996)
Get full text
Journal Article
Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates
Aigo, T., Goto, M., Ohta, Y., Jono, A., Tachikawa, A., Moritani, A.
Published in IEEE transactions on electron devices (01.04.1996)
Published in IEEE transactions on electron devices (01.04.1996)
Get full text
Journal Article
Effects of hydrogen on growth mechanism of GaAs in chemical beam epitaxy
Nagata, K., Iimura, Y., Aoyagi, Y., Namba, S., Den, S., Moritani, A.
Published in Journal of crystal growth (1988)
Published in Journal of crystal growth (1988)
Get full text
Journal Article
Metalorganic chemical vapor deposition growth of GaAs on annealed Si in H2
Get full text
Conference Proceeding
Journal Article
Study of Anodization Process on GaAs by In Situ Differential Reflectance
Yamagishi, C., Moritani, A., Nakai, J.
Published in Journal of the Electrochemical Society (01.01.1980)
Published in Journal of the Electrochemical Society (01.01.1980)
Get full text
Journal Article
WITHDRAWN: Study of plasma-nitriding process in Si with in situ spectroscopic ellipsometry
Yamada, T., Kubo, N., Kitahara, K., Moritani, A.
Published in Surface & coatings technology (01.03.2003)
Published in Surface & coatings technology (01.03.2003)
Get full text
Journal Article
Uniaxial stress effects on the 3.4 eV optical structure of silicon by schottky-barrier electroreflectance
Kondo, K., Moritani, A., Hamaguchi, C., Nakai, J.
Published in Solid state communications (01.11.1974)
Published in Solid state communications (01.11.1974)
Get full text
Journal Article