Non-amphoteric N-type doping with Sn of GaAs(631) layers grown by molecular beam epitaxy
Mora Herrera, M. F., Espinosa-Vega, L. I., Cortes-Mestizo, I. E., Olvera-Enriquez, J. P., Belio-Manzano, A., Cuellar-Camacho, J. L., Gorbatchev, A. Yu, Del Rio-De Santiago, A., Yee-Rendón, C. M., Méndez-García, V. H.
Published in Journal of applied physics (07.05.2024)
Published in Journal of applied physics (07.05.2024)
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