Negative capacitance silicon nanotube FET: a subthreshold modeling exploration of sub-60 mV/decade swing, negative drain-induced barrier lowering, and threshold voltage roll-off
Moparthi, Sandeep, Tiwari, Pramod Kumar, Saramekala, Gopi Krishna
Published in Journal of computational electronics (01.02.2023)
Published in Journal of computational electronics (01.02.2023)
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Journal Article
Investigation of Temperature and Source/Drain Overlap Impact on Negative Capacitance Silicon Nanotube FET (NC Si NTFET) with Sub-60mV/decade Switching
Moparthi, Sandeep, Tiwari, Pramod Kumar, Samoju, Visweswara Rao, Saramekala, Gopi Krishna
Published in IEEE transactions on nanotechnology (2020)
Published in IEEE transactions on nanotechnology (2020)
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Journal Article
Machine Learning Based Device Simulation Using Multi-variable Non-linear Regression to Assess the Impact of Device Parameter Variability on Threshold Voltage of Double Gate-All-Around (DGAA) MOSFET
Moparthi, Sandeep, Yadav, Chandan, Saramekala, Gopi Krishna, Tiwari, Pramod Kumar
Published in 2020 IEEE 2nd International Conference on Circuits and Systems (ICCS) (10.12.2020)
Published in 2020 IEEE 2nd International Conference on Circuits and Systems (ICCS) (10.12.2020)
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Conference Proceeding
Genetic algorithm-based threshold voltage prediction of SOI JLT using multi-variable nonlinear regression
Moparthi, Sandeep, Tiwari, Pramod Kumar, Saramekala, Gopi Krishna
Published in 2021 International Symposium on Devices, Circuits and Systems (ISDCS) (03.03.2021)
Published in 2021 International Symposium on Devices, Circuits and Systems (ISDCS) (03.03.2021)
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Conference Proceeding
Temperature Dependence of Subthreshold Characteristics of Negative Capacitance Recessed-Source/Drain (NC R-S/D) SOI MOSFET
Moparthi, Sandeep, Tiwari, Pramod Kumar, Samoju, Visweswara Rao, Saramekala, Gopi Krishna
Published in 2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) (01.12.2019)
Published in 2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) (01.12.2019)
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Conference Proceeding