Variation in Preferred Leadership Styles Across Generations
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Published in Journal of leadership in organizations (29.03.2022)
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Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
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Published in IEEE transactions on electron devices (01.01.2021)
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β-(Al 0.18 Ga 0.82 ) 2 O 3 /Ga 2 O 3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
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Published in IEEE electron device letters (01.06.2021)
Published in IEEE electron device letters (01.06.2021)
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Journal Article
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
Kalarickal, Nidhin Kurian, Xia, Zhanbo, Huang, Hsien-Lien, Moore, Wyatt, Liu, Yumo, Brenner, Mark, Hwang, Jinwoo, Rajan, Siddharth
Published in IEEE electron device letters (01.06.2021)
Published in IEEE electron device letters (01.06.2021)
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High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe F., Liu, Yumo, Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth
Published in Journal of applied physics (07.06.2020)
Published in Journal of applied physics (07.06.2020)
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Metal/BaTiO3/ \beta-Ga2O3 Dielectric Heterojunction Diode with 5.6 MV/cm Breakdown Field
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High electron density \({\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3\) modulation doping using ultra-thin (1 nm) spacer layer
Nidhin Kurian Kalarickal, Xia, Zhanbo, Mcglone, Joe, Liu, Yumo, Moore, Wyatt, Arehart, Aaron, Ringel, Steve, Rajan, Siddharth
Published in arXiv.org (25.10.2019)
Published in arXiv.org (25.10.2019)
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Paper
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Metal$/BaTiO_{3}/\beta-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
Xia, Zhanbo, Chandrasekar, Hareesh, Moore, Wyatt, Wang, Caiyu, Lee, Aidan, McGlone, Joe, Kalarickal, Nidhin Kurian, Arehart, Aaron, Ringel, Steven, Yang, Fengyuan, Rajan, Siddharth
Year of Publication 05.11.2019
Year of Publication 05.11.2019
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Journal Article
Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Nidhin Kurian Kalarickal, Xia, Zhanbo, McGlone, Joe, Krishnamoorthy, Sriram, Moore, Wyatt, Brenner, Mark, Arehart, Aaron R, Ringel, Steven A, Rajan, Siddharth
Published in arXiv.org (03.08.2019)
Published in arXiv.org (03.08.2019)
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Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Nidhin Kurian Kalarickal, Feng, Zixuan, A F M Anhar Uddin Bhuiyan, Xia, Zhanbo, McGlone, Joe F, Moore, Wyatt, Arehart, Aaron R, Ringel, Steven A, Zhao, Hongping, Rajan, Siddharth
Published in arXiv.org (03.06.2020)
Published in arXiv.org (03.06.2020)
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