Low Power and Improved Switching Properties of Selector-Less Ta2O5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
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Published in Jpn J Appl Phys (25.04.2013)
Published in Jpn J Appl Phys (25.04.2013)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications
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Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
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Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
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Conference Proceeding
Low Power and Improved Switching Properties of Selector-Less Ta sub(2)O sub(5) Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Low Power and Improved Switching Properties of Selector-Less Ta 2 O 5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Year of Publication 19.03.2015
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