ATOMIC LAYER DEPOSITION- AND CHEMICAL VAPOR DEPOSITION-TiN TOP ELECTRODE OPTIMIZATION FOR THE RELIABILITY OF Ta2O5 AND Al2O3 METAL INSULATOR SILICON CAPACITOR FOR 0.13 mu m TECHNOLOGY AND BEYOND
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Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 4B, pp. 2669-2673. 2001 (2001)
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