An accurate model of subbreakdown due to band-to-band tunneling and some applications
Endoh, T., Shirota, R., Momodomi, M., Masuoka, F.
Published in IEEE transactions on electron devices (01.01.1990)
Published in IEEE transactions on electron devices (01.01.1990)
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Journal Article
A 35 ns cycle time 3.3 V only 32 Mb NAND flash EEPROM
Iwata, Y., Imamiya, K., Sugiura, Y., Nakamura, H., Oodaira, H., Momodomi, M., Itoh, Y., Watanabe, T., Araki, H., Narita, K., Masuda, K., Miyamoto, J.-I.
Published in IEEE journal of solid-state circuits (01.11.1995)
Published in IEEE journal of solid-state circuits (01.11.1995)
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Journal Article
An experimental 4-Mbit CMOS EEPROM with a NAND-structured cell
Momodomi, M., Itoh, Y., Shirota, R., Iwata, Y., Nakayama, R., Kirisawa, R., Tanaka, T., Aritome, S., Endoh, T., Ohuchi, K., Masuoka, F.
Published in IEEE journal of solid-state circuits (01.10.1989)
Published in IEEE journal of solid-state circuits (01.10.1989)
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Journal Article
A high-density NAND EEPROM with block-page programming for microcomputer applications
Iwata, Y., Momodomi, M., Tanaka, T., Oodaira, H., Itoh, Y., Nakayama, R., Kirisawa, R., Aritome, S., Endoh, T., Shirota, R., Ohuchi, K., Masuoka, F.
Published in IEEE journal of solid-state circuits (01.04.1990)
Published in IEEE journal of solid-state circuits (01.04.1990)
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Journal Article
Optimum design of dual-control gate cell for high-density EEPROM's
Hieda, K., Wada, M., Shibata, T., Inoue, S., Momodomi, M., Iizuka, H.
Published in IEEE transactions on electron devices (01.01.1985)
Published in IEEE transactions on electron devices (01.01.1985)
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Journal Article
A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs
Ichige, M., Takeuchi, Y., Sugimae, K., Sato, A., Matsui, M., Kamigaichi, T., Kutsukake, H., Ishibashi, Y., Saito, M., Mori, S., Meguro, H., Miyazaki, S., Miwa, T., Takahashi, S., Iguchi, T., Kawai, N., Tamon, S., Arai, N., Kamata, H., Minami, T., Iizuka, H., Higashitani, M., Pham, T., Hemink, G., Momodomi, M., Shirota, R.
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
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Conference Proceeding
An accurate model of subbreakdown due to band-to-band tunneling and its application
Shirota, R., Endoh, T., Momodomi, M., Nakayama, R., Inoue, S., Kirisawa, R., Masuoka, F.
Published in Technical Digest., International Electron Devices Meeting (01.12.1988)
Published in Technical Digest., International Electron Devices Meeting (01.12.1988)
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Conference Proceeding
Analysis of LDD transistor asymmetry susceptibility in VLSI circuits
Oowaki, Y., Itoh, Y., Momodomi, M., Horiguchi, F., Watanabe, S., Ogura, M., Nishimura, H.
Published in 1985 International Electron Devices Meeting (1985)
Published in 1985 International Electron Devices Meeting (1985)
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Conference Proceeding
A 4-Mb NAND EEPROM with tight programmed Vt distribution
MOMODOMI, M, TANAKA, T, IWATA, Y, TANAKA, Y, OODAIRA, H, ITOH, Y, SHIROTA, R, OHUCHI, K, MASUOKA, F
Published in IEEE journal of solid-state circuits (01.04.1991)
Published in IEEE journal of solid-state circuits (01.04.1991)
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Journal Article
A 4 Mb NAND EEPROM with tight programmed V/sub t/ distribution
Momodomi, M., Tanaka, T., Iwata, Y., Tanaka, Y., Oodaira, H., Itoh, Y., Shirota, R., Ohuchi, K., Masuoka, F.
Published in IEEE journal of solid-state circuits (01.04.1991)
Published in IEEE journal of solid-state circuits (01.04.1991)
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Journal Article
A 4 Mb NAND EEPROM with tight programmed < e1 > V < /e1 > (t)distribution
Momodomi, M, Tanaka, T, Iwata, Y, Tanaka, Y, Oodaira, H, Itoh, Y, Shirota, R, Ohuchi, K, Masuoka, F
Published in IEEE journal of solid-state circuits (01.04.1991)
Published in IEEE journal of solid-state circuits (01.04.1991)
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Journal Article
An advanced NAND-structure cell technology for reliable 3.3 V 64 Mb electrically erasable and programmable read only memories (EEPROMs)
ARITOME, S, HATAKAYEMA, I, TANAKA, T, MOMODOMI, M, SHIROTA, R, ENDOH, T, YAMAGUCHI, T, SHUTO, S, IIZUKA, H, MARUYAMA, T, WATANABE, H, HEMINK, G, SAKUI, K
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Conference Proceeding
Journal Article
A 35 ns-cycle-time 3.3 V-only 32 Mb NAND flash EEPROM
Imamiya, K., Iwata, Y., Sugiura, Y., Nakamura, H., Oodaira, H., Momodomi, M., Ito, Y., Watanabe, T., Araki, H., Narita, K., Masuda, K., Miyamoto, J.
Published in Proceedings ISSCC '95 - International Solid-State Circuits Conference (1995)
Published in Proceedings ISSCC '95 - International Solid-State Circuits Conference (1995)
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Conference Proceeding
New ultra high density EPROM and flash EEPROM with NAND structure cell
Masuoka, F., Momodomi, M., Iwata, Y., Shirota, R.
Published in 1987 International Electron Devices Meeting (1987)
Published in 1987 International Electron Devices Meeting (1987)
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Conference Proceeding
A Quick Boosting Charge Pump Circuit for High Density and Low Voltage Flash Memories
Tanzawa, T., Tanaka, Y., Tanaka, T., Nakamura, H., Oodaira, H., Sakui, K., Momodomi, M., Shiratake, S., Nakano, H., Oowaki, Y., Watanabe, S., Ohuchi, K., Masuoka, F.
Published in Proceedings of 1994 IEEE Symposium on VLSI Circuits (1994)
Published in Proceedings of 1994 IEEE Symposium on VLSI Circuits (1994)
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Conference Proceeding
A 4-Mbit NAND-EEPROM with tight programmed Vt distribution
Tanaka, T., Momodomi, M., Iwata, Y., Tanaka, Y., Oodaira, H., Itoh, Y., Shirota, R., Ohuchi, K., Masuoka, F.
Published in Digest of Technical Papers., 1990 Symposium on VLSI Circuits (1990)
Published in Digest of Technical Papers., 1990 Symposium on VLSI Circuits (1990)
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Conference Proceeding
A 2.3 mu m/sup 2/ memory cell structure for 16 Mb NAND EEPROMs
Shirota, R., Nakayama, R., Kirisawa, R., Momodomi, M., Sakui, K., Itoh, Y., Aritome, S., Endoh, T., Hatori, F., Masuoka, F.
Published in International Technical Digest on Electron Devices (1990)
Published in International Technical Digest on Electron Devices (1990)
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Conference Proceeding
Optimum design of dual control gate cell for high density EEPROMs
Hieda, K., Wada, M., Shibata, T., Inoue, S., Momodomi, M., Iizuka, H.
Published in 1983 International Electron Devices Meeting (1983)
Published in 1983 International Electron Devices Meeting (1983)
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Conference Proceeding