Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications
Shubina, K. Yu, Berezovskaya, T. N., Mokhov, D. V., Morozov, I. A., Kotlyar, K. P., Mizerov, A. M., Nikitina, E. V., Bouravleuv, A. D.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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Journal Article
Separation of AlN layers from silicon substrates by KOH etching
Shubina, K Yu, Mokhov, D V, Berezovskaya, T N, Pirogov, E V, Nashchekin, A V, Sharofidinov, Sh Sh, Mizerov, A M
Published in Journal of physics. Conference series (01.12.2021)
Published in Journal of physics. Conference series (01.12.2021)
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Journal Article
Blazed Silicon Gratings for Soft X-Ray and Extreme Ultraviolet Radiation: the Effect of Groove Profile Shape and Random Roughness on the Diffraction Efficiency
Goray, L. I., Sharov, V. A., Mokhov, D. V., Berezovskaya, T. N., Shubina, K. Yu, Pirogov, E. V., Dashkov, A. S., Bouravleuv, A. D.
Published in Technical physics (01.12.2023)
Published in Technical physics (01.12.2023)
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Journal Article
Blazed Diffraction Gratings on Si—First Results
Goray, L. I., Berezovskaya, T. N., Mokhov, D. V., Sharov, V. A., Shubina, K. Yu, Pirogov, E. V., Dashkov, A. S.
Published in Technical physics (01.12.2023)
Published in Technical physics (01.12.2023)
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Journal Article
Silicon Echelles for Soft X-Ray and Extreme UV Radiation: Influence of the Camber of the Reflective Facet on the Diffraction Efficiency
Goray, L. I., Berezovskaya, T. N., Mokhov, D. V., Sharov, V. A., Shubina, K. Yu, Pirogov, E. V., Dashkov, A. S.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.12.2023)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.12.2023)
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Journal Article
Fabrication and Soft-X-Ray and EUV Range Testing of Au- and Multilayer Mo/Si-Coated Diffraction Gratings with High-Order Blaze
Goray, L. I., Berezovskaya, T. N., Mokhov, D. V., Sharov, V. A., Shubina, K. Yu, Pirogov, E. V., Dashkov, A. S., Nashchekin, A. V., Zorina, M. V., Barysheva, M. M., Garakhin, S. A., Zuev, S. Yu, Chkhalo, N. I.
Published in Bulletin of the Lebedev Physics Institute (01.08.2023)
Published in Bulletin of the Lebedev Physics Institute (01.08.2023)
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Journal Article
Metal-assisted photoenhanced wet chemical etching of GaN epitaxial layers
Shubina, K Yu, Mokhov, D V, Berezovskaya, T N, Mizerov, A M, Nikitina, E V, Bouravleuv, A D
Published in Journal of physics. Conference series (01.12.2018)
Published in Journal of physics. Conference series (01.12.2018)
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Journal Article
Elevated temperature lasing from injection microdisk lasers on silicon
Kryzhanovskaya, N V, Moiseev, E I, Polubavkina, Y S, Maximov, M V, Mokhov, D V, Morozov, I A, Kulagina, M M, Zadiranov, Y M, Lipovskii, A A, Tang, M, Liao, M, Wu, J, Chen, S, Liu, H, Zhukov, A E
Published in Laser physics letters (01.01.2018)
Published in Laser physics letters (01.01.2018)
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Journal Article
Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE
Shubina, K Yu, Mizerov, A M, Timoshnev, S N, Mokhov, D V, Nikitina, E V, Kim, I, Bouravleuv, A D
Published in Journal of physics. Conference series (01.12.2019)
Published in Journal of physics. Conference series (01.12.2019)
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Journal Article
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov, A. M., Timoshnev, S. N., Nikitina, E. V., Sobolev, M. S., Shubin, K. Yu, Berezovskaia, T. N., Mokhov, D. V., Lundin, W. V., Nikolaev, A. E., Bouravleuv, A. D.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
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Journal Article
Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates
Mizerov, A. M., Kukushkin, S. A., Sharofidinov, Sh. Sh, Osipov, A. V., Timoshnev, S. N., Shubina, K. Yu, Berezovskaya, T. N., Mokhov, D. V., Buravlev, A. D.
Published in Physics of the solid state (01.12.2019)
Published in Physics of the solid state (01.12.2019)
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Journal Article
Separation of Ga-polar GaN layer from Si substrate by wet chemical etching
Shubina, K Yu, Berezovskaya, T N, Mokhov, D V, Mizerov, A M, Nikitina, E V
Published in Journal of physics. Conference series (01.11.2017)
Published in Journal of physics. Conference series (01.11.2017)
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Journal Article
The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates
Shubina, K. Yu, Berezovskaya, T. N., Mokhov, D. V., Mizerov, A. M., Nikitina, E. V.
Published in Technical physics letters (01.11.2017)
Published in Technical physics letters (01.11.2017)
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Journal Article
Precision calibration of the silicon doping level in gallium arsenide epitaxial layers
Mokhov, D. V., Berezovskaya, T. N., Kuzmenkov, A. G., Maleev, N. A., Timoshnev, S. N., Ustinov, V. M.
Published in Technical physics letters (01.10.2017)
Published in Technical physics letters (01.10.2017)
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Journal Article
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers
Mokhov, D. V., Berezovskaya, T. N., Nikitina, E. V., Shubina, K. Yu, Mizerov, A. M., Bouravleuv, A. D.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2019)
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Journal Article