Discovery of III–V Semiconductors: Physical Properties and Application
Mikhailova, M. P., Moiseev, K. D., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2019)
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Journal Article
Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction
Semakova, A. A., Romanov, V. V., Bazhenov, N. L., Mynbaev, K. D., Moiseev, K. D.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2021)
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Journal Article
Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy
Moiseev, K. D., Romanov, V. V., Kudryavtsev, Yu. A.
Published in Physics of the solid state (01.11.2016)
Published in Physics of the solid state (01.11.2016)
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Journal Article
Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions
Mikhailova, M P, Moiseev, K D, Yakovlev, Yu P
Published in Semiconductor science and technology (01.10.2004)
Published in Semiconductor science and technology (01.10.2004)
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Journal Article
Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
Parfeniev, R.V., Moiseev, K.D., Berezovets, V.A., Averkiev, N.S., Mikhailova, M.P., Nizhankovskii, V.I., Kaczorowski, D.
Published in Journal of magnetism and magnetic materials (01.04.2009)
Published in Journal of magnetism and magnetic materials (01.04.2009)
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Journal Article
Conference Proceeding
Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
MOISEEV, K. D, ROMANOV, V. V, VORONINA, T. I, LAGUNOVA, T. S, MIKHAILOVA, M. P, YAKOVLEV, Yu. P
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Conference Proceeding
Journal Article
Long-Wavelength LEDs in the Atmospheric Transparency Window of 4.6–5.3 μm
Romanov, V. V., Ivanov, E. V., Pivovarova, A. A., Moiseev, K. D., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2020)
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Journal Article
The spin-orbit splitting band in InGaAsSb alloys lattice-matched to InAs
Motyka, M, Dyksik, M, Janiak, F, Moiseev, K D, Misiewicz, J
Published in Journal of physics. D, Applied physics (16.07.2014)
Published in Journal of physics. D, Applied physics (16.07.2014)
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Journal Article
Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix
Moiseev, K.D., Romanov, V.V., Dement׳ev, P.A., Ivanov, E.V.
Published in Journal of crystal growth (15.03.2015)
Published in Journal of crystal growth (15.03.2015)
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Journal Article
Effects of Magnetic Ordering in Conductivity and Magnetization of GaAs-Based Semiconductor Heterostructures upon Changing the Concentration of the Delta-Layer of Manganese Admixture
Moiseev, K. D., Kudryavtsev, Yu. A., Charikova, T. B., Lugovykh, A. M., Govorkova, T. E., Okulov, V. I.
Published in Physics of the solid state (01.12.2018)
Published in Physics of the solid state (01.12.2018)
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Journal Article
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
Sokura, L. A., Parkhomenko, Ya. A., Moiseev, K. D., Nevedomsky, V. N., Bert, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2017)
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Journal Article
On the delta-type doping of GaAs-based heterostructures with manganese compounds
Moiseev, K. D., Nevedomsky, V. N., Kudriavtsev, Yu, Escobosa-Echavarria, A., Lopez-Lopez, M.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
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Journal Article