First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs
Capogreco, E., Witters, L., Arimura, H., Sebaai, F., Porret, C., Hikavyy, A., Loo, R., Milenin, A. P., Eneman, G., Favia, P., Bender, H., Wostyn, K., Dentoni Litta, E., Schulze, A., Vrancken, C., Opdebeeck, A., Mitard, J., Langer, R., Holsteyns, F., Waldron, N., Barla, K., De Heyn, V., Mocuta, D., Collaert, N.
Published in IEEE transactions on electron devices (01.11.2018)
Published in IEEE transactions on electron devices (01.11.2018)
Get full text
Journal Article
The Complementary FET (CFET) for CMOS scaling beyond N3
Ryckaert, J., Schuddinck, P., Weckx, P., Bouche, G., Vincent, B., Smith, J., Sherazi, Y., Mallik, A., Mertens, H., Demuynck, S., Bao, T. Huynh, Veloso, A., Horiguchi, N., Mocuta, A., Mocuta, D., Boemmels, J.
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
Get full text
Conference Proceeding
Junctionless versus inversion-mode lateral semiconductor nanowire transistors
Veloso, A, Matagne, P, Simoen, E, Kaczer, B, Eneman, G, Mertens, H, Yakimets, D, Parvais, B, Mocuta, D
Published in Journal of physics. Condensed matter (26.09.2018)
Published in Journal of physics. Condensed matter (26.09.2018)
Get full text
Journal Article
Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition
Witters, L., Arimura, H., Sebaai, F., Hikavyy, A., Milenin, A. P., Loo, R., De Keersgieter, A., Eneman, G., Schram, T., Wostyn, K., Devriendt, K., Schulze, A., Lieten, R., Bilodeau, S., Cooper, E., Storck, P., Chiu, E., Vrancken, C., Favia, P., Vancoille, E., Mitard, J., Langer, R., Opdebeeck, A., Holsteyns, F., Waldron, N., Barla, K., De Heyn, V., Mocuta, D., Collaert, N.
Published in IEEE transactions on electron devices (01.11.2017)
Published in IEEE transactions on electron devices (01.11.2017)
Get full text
Journal Article
Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon
Qiu, Y, Bender, H, Richard, O, Kim, M-S, Van Besien, E, Vos, I, de Potter de ten Broeck, M, Mocuta, D, Vandervorst, W
Published in Scientific reports (04.08.2015)
Published in Scientific reports (04.08.2015)
Get full text
Journal Article
Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation
Arimura, H., Dekkers, H., Ragnarsson, L.-A., Mitard, J., De Heyn, V., Mocuta, D., Collaert, N., Horiguchi, N., Cott, D., Boccardi, G., Loo, R., Wostyn, K., Witters, L., Conard, T., Suhard, S., van Dorp, D.
Published in IEEE transactions on electron devices (01.12.2019)
Published in IEEE transactions on electron devices (01.12.2019)
Get full text
Journal Article
3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability
Vandooren, A., Franco, J., Parvais, B., Wu, Z., Witters, L., Walke, A., Li, W., Peng, L., Deshpande, V., Bufler, F. M., Rassoul, N., Hellings, G., Jamieson, G., Inoue, F., Verbinnen, G., Devriendt, K., Teugels, L., Heylen, N., Vecchio, E., Zheng, T., Rosseel, E., Vanherle, W., Hikavyy, A., Chan, B. T., Ritzenthaler, R., Besnard, G., Schwarzenbach, W., Gaudin, G., Radu, I., Nguyen, B.-Y., Waldron, N., De Heyn, V., Mocuta, D., Collaert, N.
Published in IEEE transactions on electron devices (01.11.2018)
Published in IEEE transactions on electron devices (01.11.2018)
Get full text
Journal Article
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Mertens, H., Ritzenthaler, R., Hikavyy, A., Kim, M. S., Tao, Z., Wostyn, K., Chew, S. A., De Keersgieter, A., Mannaert, G., Rosseel, E., Schram, T., Devriendt, K., Tsvetanova, D., Dekkers, H., Demuynck, S., Chasin, A., Van Besien, E., Dangol, A., Godny, S., Douhard, B., Bosman, N., Richard, O., Geypen, J., Bender, H., Barla, K., Mocuta, D., Horiguchi, N., Thean, A. V-Y
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Get full text
Conference Proceeding
Processing Technologies for Advanced Ge Devices
Loo, R., Hikavyy, A. Y., Witters, L., Schulze, A., Arimura, H., Cott, D., Mitard, J., Porret, C., Mertens, H., Ryan, P., Wall, J., Matney, K., Wormington, M., Favia, P., Richard, O., Bender, H., Thean, A., Horiguchi, N., Mocuta, D., Collaert, N.
Published in ECS journal of solid state science and technology (01.01.2017)
Published in ECS journal of solid state science and technology (01.01.2017)
Get full text
Journal Article
Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect
Witters, L., Mitard, J., Loo, R., Demuynck, S., Chew, S. A., Schram, T., Tao, Z., Hikavyy, A., Sun, J. W., Milenin, A. P., Mertens, H., Vrancken, C., Favia, P., Schaekers, M., Bender, H., Horiguchi, N., Langer, R., Barla, K., Mocuta, D., Collaert, N., Thean, A. V.-Y
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Get full text
Conference Proceeding
Journal Article
Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass
Kikuchi, Y., Chiarella, T., De Roest, D., Blanquart, T., De Keersgieter, A., Kenis, K., Peter, A., Ong, P., Van Besien, E., Tao, Z., Kim, M. S., Kubicek, S., Chew, S. A., Schram, T., Demuynck, S., Mocuta, A., Mocuta, D., Horiguchi, N.
Published in IEEE electron device letters (01.09.2016)
Published in IEEE electron device letters (01.09.2016)
Get full text
Journal Article
Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal
Mertens, H., Ritzenthaler, R., Arimura, H., Franco, J., Sebaai, F., Hikavyy, A., Pawlak, B. J., Machkaoutsan, V., Devriendt, K., Tsvetanova, D., Milenin, A. P., Witters, L., Dangol, A., Vancoille, E., Bender, H., Badaroglu, M., Holsteyns, F., Barla, K., Mocuta, D., Horiguchi, N., Thean, A. V.-Y
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Get full text
Conference Proceeding
Journal Article
Holisitic device exploration for 7nm node
Raghavan, P., Bardon, M. Garcia, Jang, D., Schuddinck, P., Yakimets, D., Ryckaert, J., Mercha, A., Horiguchi, N., Collaert, N., Mocuta, A., Mocuta, D., Tokei, Z., Verkest, D., Thean, A., Steegen, A.
Published in 2015 IEEE Custom Integrated Circuits Conference (CICC) (01.09.2015)
Published in 2015 IEEE Custom Integrated Circuits Conference (CICC) (01.09.2015)
Get full text
Conference Proceeding
Strained Si CMOS (SS CMOS) technology: opportunities and challenges
Rim, K., Anderson, R., Boyd, D., Cardone, F., Chan, K., Chen, H., Christansen, S., Chu, J., Jenkins, K., Kanarsky, T., Koester, S., Lee, B.H., Lee, K., Mazzeo, V., Mocuta, A., Mocuta, D., Mooney, P.M., Oldiges, P., Ott, J., Ronsheim, P., Roy, R., Steegen, A., Yang, M., Zhu, H., Ieong, M., Wong, H.-S.P.
Published in Solid-state electronics (01.07.2003)
Published in Solid-state electronics (01.07.2003)
Get full text
Journal Article
P80 Two different modalities to end a pregnancy with severe neurological fetal malformations
Szasz, F., Pop, T., Craiut, D., Herczegh, R., Mocuta, D., Bodog, A., Noja, C.
Published in International journal of gynecology and obstetrics (01.10.2009)
Published in International journal of gynecology and obstetrics (01.10.2009)
Get full text
Journal Article
A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Sasaki, Y., Ritzenthaler, R., De Keersgieter, A., Chiarella, T., Kubicek, S., Rosseel, E., Waite, A., del Agua Borniquel, J., Colombeau, B., Chew, S. A., Kim, M. S., Schram, T., Demuynck, S., Vandervorst, W., Horiguchi, N., Mocuta, D., Mocuta, A., Thean, A. V.-Y
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Get full text
Conference Proceeding
Journal Article
New electrical testing structures and analysis method for MOL and BEOL process diagnostics and TDDB reliability assessment
Fen Chen, Mittl, S., Shinosky, M., Dufresne, R., Aitken, J., Yanfeng Wang, Kolvenback, K., Henson, W. K., Mocuta, D.
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Get full text
Conference Proceeding
Momentum-resolved excited-electron lifetimes on stepped Cu(7 7 5)
Shen, X.J., Kwak, H., Radojevic, A.M., Smadici, S., Mocuta, D., Osgood, R.M.
Published in Chemical physics letters (04.01.2002)
Published in Chemical physics letters (04.01.2002)
Get full text
Journal Article
Recent Progress and Challenges in Enabling Embedded Si:C Technology
Yang, B F., Ren, Zhibin, Takalkar, Rohit, Black, Linda R., Dube, Abhishek, Weijtmans, J. W., Li, John, Chan, K, Souza, J P de, Madan, Anita, Xia, G., Zhu, Zhengmao, Faltermeier, J., Reznicek, A., Adam, Thomas N., Chakravarti, Ashima, Pei, G, Pal, Rohit, Yang, B, Harley, Eric C., Greene, B, Gehring, A, Cai, M, Sadana, D, Park, D, Mocuta, D, Schepis, Dominic J., Maciejewski, E, Luning, S, Leobandung, E
Published in ECS transactions (2009)
Published in ECS transactions (2009)
Get full text
Journal Article