The electronic structure at the atomic scale of ultrathin gate oxides
Muller, D. A, Sorsch, T, Moccio, S, Baumann, F. H, Evans-Lutterodt, K, Timp, G
Published in Nature (London) (24.06.1999)
Published in Nature (London) (24.06.1999)
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Journal Article
Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS
GREEN, M. L, SORSCH, T. W, TIMP, G. L, MULLER, D. A, WEIR, B. E, SILVERMAN, P. J, MOCCIO, S. V, KIM, Y. O
Published in Microelectronic engineering (01.09.1999)
Published in Microelectronic engineering (01.09.1999)
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Conference Proceeding
Journal Article
The relentless march of the MOSFET gate oxide thickness to zero
Timp, G, Bude, J, Baumann, F, Bourdelle, K.K, Boone, T, Garno, J, Ghetti, A, Green, M, Gossmann, H, Kim, Y, Kleiman, R, Kornblit, A, Klemens, F, Moccio, S, Muller, D, Rosamilia, J, Silverman, P, Sorsch, T, Timp, W, Tennant, D, Tung, R, Weir, B
Published in Microelectronics and reliability (01.04.2000)
Published in Microelectronics and reliability (01.04.2000)
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Journal Article
Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs
Timp, G., Agarwal, A., Baumann, F.H., Boone, T., Buonanno, M., Cirelli, R., Donnelly, V., Foad, M., Grant, D., Green, M., Gossmann, H., Hillenius, S., Jackson, J., Jacobson, D., Kleiman, R., Komblit, A., Klemens, F., Lee, J.T.-C., Mansfield, W., Moccio, S., Murrell, A., O'Malley, M., Rosamilia, J., Sapjeta, J., Silverman, P., Sorsch, T., Tai, W.W., Tennant, D., Vuong, H., Weir, B.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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Conference Proceeding
Progress toward 10 nm CMOS devices
Timp, G., Bourdelle, K.K., Bower, J.E., Baumann, F.H., Boone, T., Cirelli, R., Evans-Lutterodt, K., Garno, J., Ghetti, A., Gossmann, H., Green, M., Jacobson, D., Kim, Y., Kleiman, R., Klemens, F., Kornlit, A., Lochstampfor, C., Mansfield, W., Moccio, S., Muller, D.A., Ocola, I.E., O'Malley, M.I., Rosamilia, J., Sapjeta, J., Silverman, P., Sorsch, T., Tennant, D.M., Timp, W., Weir, B.E.
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
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Conference Proceeding
An anode hole injection percolation model for oxide breakdown-the "doom's day" scenario revisited
Alam, M.A., Bude, J., Weir, B., Silverman, P., Ghetti, A., Monroe, D., Cheung, K.P., Moccio, S.
Published in International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999)
Published in International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999)
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Conference Proceeding
Understanding the limits of ultrathin SiO sub(2) and Si-O-N gate dielectrics for sub-50 nm CMOS
Green, M L, Sorsch, T W, Timp, G L, Muller, D A, Weir, B E, Silverman, P J, Moccio, S V, Kim, Y O
Published in Microelectronic engineering (01.01.1999)
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Published in Microelectronic engineering (01.01.1999)
Journal Article
The ballistic nano-transistor
Timp, G., Bude, J., Bourdelle, K.K., Garno, J., Ghetti, A., Gossmann, H., Green, M., Forsyth, G., Kim, Y., Kleiman, R., Klemens, F., Kornblit, A., Lochstampfor, C., Mansfield, W., Moccio, S., Sorsch, T., Tennant, D.M., Timp, W., Tung, R.
Published in International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999)
Published in International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999)
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Conference Proceeding
Ultra-thin, 1.0-3.0 nm, gate oxides for high performance sub-100 nm technology
Sorsch, T., Timp, W., Baumann, F.H., Bogart, K.H.A., Boone, T., Donnelly, V.M., Green, M., Evans-Lutterodt, K., Kim, C.Y., Moccio, S., Rosamilia, J., Sapjeta, J., Silvermann, P., Weir, B., Timp, G.
Published in 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) (1998)
Published in 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) (1998)
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Conference Proceeding
Ultra-thin gate oxides and ultra-shallow junctions for high performance, sub-100 nm pMOSFETs
Timp, G., Agarwal, A., Bourdella, K.K., Bower, J., Boone, T., Ghetti, A., Green, M., Gamo, J., Gossmann, H., Jacobson, D., Kleiman, R., Kornblit, A., Klemens, F., Moccio, S., O'Malley, M.L., Ocola, L., Rossm-nalia, J., Sapjeta, J., Silverman, P., Sorsch, T., Timp, W., Tennani, D.
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
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Conference Proceeding
Lift-off door hinge
KESTEN JOSHUA R, WHEELER JOHN O, MACHIN RONALD, BUDDE LOTHAR, MOCCIO CRAIG A, FOLK PATRICK L
Year of Publication 03.02.2010
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Year of Publication 03.02.2010
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