Search Results - "Mo Huai Chang" :: K.UTB vyhledávací portál

An Analysis of the NBTI-Induced Threshold Voltage Shift Evaluated by Different Techniques

by Zhigang Ji, Jian Fu Zhang, Mo Huai Chang, Kaczer, B., Groeseneken, G.
Published in IEEE transactions on electron devices (01.05.2009)

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Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect

by Zhao, Ce Z., Zhang, Jian F., Chang, Mo Huai, Peaker, A. R., Hall, Stephen, Groeseneken, Guido, Pantisano, Luigi, De Gendt, Stefan, Heyns, Marc
Published in IEEE transactions on electron devices (01.07.2008)

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Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides

by Mo Huai Chang, Zhang, J.F., Zhang, W.D.
Published in IEEE transactions on electron devices (01.06.2006)

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Optimizing the trade-off between the RDS(on) of power MOSFETs and linear mode perfomance by local modification of MOSFET gain

by Mo-Huai Chang, Rutter, Phil
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)

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Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks

by Zhang, J.F., Mo Huai Chang, Zhigang Ji, Lin Lin, Ferain, I., Groeseneken, G., Pantisano, L., De Gendt, S., Heyns, M.M.
Published in IEEE electron device letters (01.12.2008)

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Journal Article