Characterization of the p-NiO/n-GaN heterojunction and development of ultraviolet photodiode
Enns, Yakov, Timoshnev, Sergei, Kazakin, Alexey, Shubina, Ksenia, Uvarov, Alexander, Vorobyev, Alexander, Nikitina, Ekaterina, Mizerov, Andrey, Andreeva, Valentina, Fedorenko, Elizaveta, Koroleva, Alexandra, Zhizhin, Evgeniy
Published in Materials science in semiconductor processing (01.10.2024)
Published in Materials science in semiconductor processing (01.10.2024)
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Investigations of Nanoscale Columnar Al[sub.x]Ga[sub.1-x]N/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
Seredin, Pavel Vladimirovich, Kurilo, Nikolay, Goloshchapov, Dmitry L, Kashkarov, Vladimir, Lenshin, Aleksandr S, Buylov, Nikita, Nesterov, Dmitry, Mizerov, Andrey, Kukushkin, Sergey A, Timoshnev, S, Shubina, K. Yu, Sobolev, M. S
Published in Photonics (01.10.2023)
Published in Photonics (01.10.2023)
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InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range
Ivanov, Sergey V., Jmerik, Valentin N., Shubina, Tatiana V., Listoshin, Svyatoslav B., Mizerov, Andrey M., Sitnikova, Alla A., Kim, Min-Ho, Koike, Masayoshi, Kim, Bum-Joon, Kop’ev, Pyotr S.
Published in Journal of crystal growth (01.04.2007)
Published in Journal of crystal growth (01.04.2007)
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Journal Article
Electrical properties of Mg-doped GaN and AlxGa1-xN
Komissarova, Tatiana A., Jmerik, Valentin N., Mizerov, Andrey M., Shmidt, Nataliya M., Ber, Boris Ya, Kasantsev, Dmitry Yu, Ivanov, Sergey V.
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
Electrical properties of Mg‐doped GaN and Al x Ga 1–x N
Komissarova, Tatiana A., Jmerik, Valentin N., Mizerov, Andrey M., Shmidt, Nataliya M., Ber, Boris Ya, Kasantsev, Dmitry Yu, Ivanov, Sergey V.
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650nm range
Ivanov, Sergey V, Jmerik, Valentin N, Shubina, Tatiana V, Listoshin, Svyatoslav B, Mizerov, Andrey M, Sitnikova, Alla A, Kim, Min-Ho, Koike, Masayoshi, Kim, Bum-Joon, Kop'ev, Pyotr S
Published in Journal of crystal growth (01.04.2007)
Published in Journal of crystal growth (01.04.2007)
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Journal Article
Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2-2.6 um
Vasilkova, E. I., Pirogov, E. V., Sobolev, M. S., Ubiyvovk, E. V., Mizerov, A. M., Seredin, P. V.
Published in Kondensirovannye sredy i mežfaznye granicy (2023)
Published in Kondensirovannye sredy i mežfaznye granicy (2023)
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Journal Article
InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
IVANOV, Sergey V, JMERIK, Valentin N, SHUBINA, Tatiana V, LISTOSHIN, Svyatoslav B, MIZEROV, Andrey M, SITNIKOVA, Alla A, KIM, Min-Ho, KOIKE, Masayoshi, KIM, Bum-Joon, KOP'EV, Pyotr S
Published in Journal of crystal growth (2007)
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Published in Journal of crystal growth (2007)
Conference Proceeding
Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer
Леньшин, Александр Сергеевич, Середин, Павел Владимирович, Золотухин, Дмитрий Сергеевич, Бельтюков, Артемий Николаевич, Мизеров, Андрей Михайлович, Касаткин, Игорь Алексеевич, Али, Радам, Домашевская, Эвелина Павловна
Published in Kondensirovannye sredy i mežfaznye granicy (15.03.2022)
Published in Kondensirovannye sredy i mežfaznye granicy (15.03.2022)
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Journal Article
Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy
Seredin, P. V., Kurilo, N. A., Radam, Ali O., Builov, N. S., Goloshchapov, D. L., Ivkov, S. A., Lenshin, A. S., Arsentiev, I. N., Nashchekin, A. V., Sharofldinov, Sh. Sh, Mizerov, A. M., Sobolev, M. S., Pirogov, E. V., Semeykin, I. V.
Published in Kondensirovannye sredy i mežfaznye granicy (2023)
Published in Kondensirovannye sredy i mežfaznye granicy (2023)
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