Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
Tanaka, Atsushi, Matsuhata, Hirofumi, Kawabata, Naoyuki, Mori, Daisuke, Inoue, Kei, Ryo, Mina, Fujimoto, Takumi, Tawara, Takeshi, Miyazato, Masaki, Miyajima, Masaaki, Fukuda, Kenji, Ohtsuki, Akihiro, Kato, Tomohisa, Tsuchida, Hidekazu, Yonezawa, Yoshiyuki, Kimoto, Tsunenobu
Published in Journal of applied physics (07.03.2016)
Published in Journal of applied physics (07.03.2016)
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Journal Article
Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes
Hayashi, Shohei, Yamashita, Tamotsu, Senzaki, Junji, Miyazato, Masaki, Ryo, Mina, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p-i-n diodes
Okada, Aoi, Nishio, Johji, Iijima, Ryosuke, Ota, Chiharu, Goryu, Akihiro, Miyazato, Masaki, Ryo, Mina, Shinohe, Takashi, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
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Journal Article
Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes
Hayashi, Shohei, Yamashita, Tamotsu, Miyazato, Masaki, Miyajima, Masaaki, Senzaki, Junji, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.01.2019)
Published in Japanese Journal of Applied Physics (01.01.2019)
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Journal Article
Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes
Hayashi, Shohei, Naijo, Takanori, Yamashita, Tamotsu, Miyazato, Masaki, Ryo, Mina, Fujisawa, Hiroyuki, Miyajima, Masaaki, Senzaki, Junji, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
Published in Applied physics express (01.08.2017)
Published in Applied physics express (01.08.2017)
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Journal Article
Extension of stacking faults in 4H-SiC pn diodes under a high current pulse stress
Iwahashi, Yohei, Miyazato, Masaki, Miyajima, Masaaki, Yonezawa, Yoshiyuki, Kato, Tomohisa, Fujiwara, Hirokazu, Hamada, Kimimori, Otsuki, Akihiro, Okumura, Hajime
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer
Tawara, Takeshi, Miyazawa, Tetsuya, Ryo, Mina, Miyazato, Masaki, Fujimoto, Takumi, Takenaka, Kensuke, Matsunaga, Shinichiro, Miyajima, Masaaki, Otsuki, Akihiro, Yonezawa, Yoshiyuki, Kato, Tomohisa, Okumura, Hajime, Kimoto, Tsunenobu, Tsuchida, Hidekazu
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Configuration of Hydrogen in Sp 3 -Rich Amorphous Hydrogenated Carbon Films Prepared by RF Magnetron Sputtering of Graphite
Minoru Toguchi, Minoru Toguchi, Akira Higa, Akira Higa, Takaharu Shima, Takaharu Shima, Masaki Miyazato, Masaki Miyazato
Published in Japanese Journal of Applied Physics (01.05.1994)
Published in Japanese Journal of Applied Physics (01.05.1994)
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Journal Article
GENERATION AREA DETECTION PROGRAM FOR STOP STATE VEHICLE, GENERATION AREA DETECTION DEVICE FOR STOP STATE VEHICLE, AND GENERATION AREA DETECTION METHOD FOR STOP STATE VEHICLE
MIURA YOSHIKO, MIYAZATO MASAKI, SHIMADA KOJI, TAKANO KOSEI, YOSHIKAWA HAYATO, TSURUYA TAKECHIKA
Year of Publication 17.05.2018
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Year of Publication 17.05.2018
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