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Published in Japanese Journal of Applied Physics (01.03.2018)
Published in Japanese Journal of Applied Physics (01.03.2018)
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Erratum: Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices [e-J. Surf. Sci. Nanotech. Vol. 15, pp. 127-134 (2017)]
Fukuda, Etsuo, Endoh, Tetsuo, Ishikawa, Takashi, Izunome, Koji, Kamijo, Kazutaka, Miyashita, Moriya, Sakamoto, Takao, Kageshima, Hiroyuki
Published in E-journal of surface science and nanotechnology (25.08.2018)
Published in E-journal of surface science and nanotechnology (25.08.2018)
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Nondestructive interface state measurement by pulse photoconductivity method
Furuta, Masaaki, Shimizu, Kojiro, Maeta, Takahiro, Miyashita, Moriya, Izunome, Koji, Kubota, Hiroshi
Published in Surface and interface analysis (01.11.2016)
Published in Surface and interface analysis (01.11.2016)
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Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices
Fukuda, Etsuo, Endoh, Tetsuo, Ishikawa, Takashi, Izunome, Koji, Kamijo, Kazutaka, Miyashita, Moriya, Sakamoto, Takao, Kageshima, Hiroyuki
Published in E-journal of surface science and nanotechnology (01.01.2017)
Published in E-journal of surface science and nanotechnology (01.01.2017)
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Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
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Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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3차원 구조체의 제조 방법, 세로형 트랜지스터의 제조 방법, 세로형 트랜지스터용 웨이퍼 및 세로형 트랜지스터용 기판
MIYASHITA MORIYA, KAMIJO KAZUTAKA, ENDOH TETSUO, ISHIKAWA TAKASHI, IZUNOME KOJI, FUKUDA ETSUO, SAKAMOTO TAKAO
Year of Publication 10.03.2020
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Year of Publication 10.03.2020
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GAP CONTROL METHOD AND ELECTRICAL CHARACTERISTIC MEASUREMENT METHOD
MIYASHITA MORIYA, HASHISHIN TAKESHI, FURUTA MASAAKI, MATSUYAMA KOKI, KUBOTA HIROSHI, KOBAYASHI KAZUHIRO, MAEDA TAKAHIRO, KUMAGAI YUKI, SUZUKI HIROMI, KUZUKAWA SHOTARO
Year of Publication 01.10.2020
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Year of Publication 01.10.2020
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ELECTRICAL CHARACTERISTIC MEASURING APPARATUS AND ELECTRICAL CHARACTERISTIC MEASURING METHOD
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Year of Publication 01.10.2020
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Year of Publication 01.10.2020
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METHOD FOR PRODUCING THREE-DIMENSIONAL STRUCTURE, METHOD FOR PRODUCING VERTICAL TRANSISTOR, WAFER FOR VERTICAL TRANSISTOR, AND SUBSTRATE FOR VERTICAL TRANSISTOR
ISHIKAWA Takashi, IZUNOME Koji, FUKUDA Etsuo, ENDOH Tetsuo, MIYASHITA Moriya, SAKAMOTO Takao, KAMIJO Kazutaka
Year of Publication 24.01.2019
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Year of Publication 24.01.2019
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INTERFACE LEVEL DENSITY MEASURING DEVICE
MIYASHITA MORIYA, HASHISHIN TAKESHI, FURUTA MASAAKI, MATSUYAMA KOKI, KUBOTA HIROSHI, KOBAYASHI KAZUHIRO, MAEDA TAKAHIRO, ONO TAKAHIRO, NAGANO MASAHIRO, KAWANO TATSURO
Year of Publication 06.06.2019
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Year of Publication 06.06.2019
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SILICON WAFER RECOMBINATION LIFETIME MEASUREMENT METHOD
ARAKI NOBUE, MIYASHITA MORIYA, TANIIKE SEIJI, HIDAKA HIROMI, KODERA TAKASHI
Year of Publication 07.01.2016
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Year of Publication 07.01.2016
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ELECTRICAL CONDUCTIVITY MEASUREMENT DEVICE OF DIELECTRIC FILM
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Year of Publication 06.06.2019
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Year of Publication 06.06.2019
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Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing
Araki, Koji, Sudo, Haruo, Aoki, Tatsuhiko, Senda, Takeshi, Isogai, Hiromichi, Tsubota, Hiroyuki, Miyashita, Moriya, Matsumura, Hisashi, Saito, Hiroyuki, Maeda, Susumu, Kashima, Kazuhiko, Izunome, Koji
Published in Japanese Journal of Applied Physics (01.08.2010)
Published in Japanese Journal of Applied Physics (01.08.2010)
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Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate
Kamijo, Kazutaka, Ishikawa, Takashi, Sakamoto, Takao, Miyashita, Moriya, Endoh, Tetsuo, Izunome, Koji, Fukuda, Etsuo
Year of Publication 30.01.2024
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Year of Publication 30.01.2024
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METHOD FOR PRODUCING THREE-DIMENSIONAL STRUCTURE, METHOD FOR PRODUCING VERTICAL TRANSISTOR, VERTICAL TRANSISTOR WAFER, AND VERTICAL TRANSISTOR SUBSTRATE
MIYASHITA, Moriya, ENDOH, Tetsuo, IZUNOME, Koji, ISHIKAWA, Takashi, KAMIJO, Kazutaka, FUKUDA, Etsuo, SAKAMOTO, Takao
Year of Publication 24.03.2022
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Year of Publication 24.03.2022
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METHOD FOR PRODUCING THREE-DIMENSIONAL STRUCTURE, METHOD FOR PRODUCING VERTICAL TRANSISTOR, VERTICAL TRANSISTOR WAFER, AND VERTICAL TRANSISTOR SUBSTRATE
MIYASHITA, Moriya, ENDOH, Tetsuo, IZUNOME, Koji, ISHIKAWA, Takashi, KAMIJO, Kazutaka, FUKUDA, Etsuo, SAKAMOTO, Takao
Year of Publication 02.07.2020
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Year of Publication 02.07.2020
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SEMICONDUCTOR WAFER WITH ID MARK EQUIPMENT FOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FROM THEM
NITTA SHINICHI, MATSUSHITA HIROSHI, ARIKADO TSUNETOSHI, IWASE MASAO, TANZAWA KATSUJIRO, TSUCHIYA NORIHIKO, NADAHARA SOICHI, YAMADA HIROAKI, MIYASHITA MORIYA, NAGANO HAJIME, USHIKU YUKIHIRO, UDO YUSO, SUGAMOTO JUNJI, OKUMURA KATSUYA
Year of Publication 04.10.2002
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Year of Publication 04.10.2002
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