Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD
Ikeyama, Kazuki, Tomita, Hidemoto, Harada, Sayaka, Okawa, Takashi, Liu, Li, Kawaharamura, Toshiyuki, Miyake, Hiroki, Nagasato, Yoshitaka
Published in Applied physics express (17.06.2024)
Published in Applied physics express (17.06.2024)
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Journal Article
AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter
Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun
Published in IEEE transactions on electron devices (01.09.2013)
Published in IEEE transactions on electron devices (01.09.2013)
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Journal Article
Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
Okuda, Takafumi, Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun
Published in Japanese Journal of Applied Physics (01.01.2013)
Published in Japanese Journal of Applied Physics (01.01.2013)
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Journal Article
Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors
Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun
Published in Japanese Journal of Applied Physics (13.02.2014)
Published in Japanese Journal of Applied Physics (13.02.2014)
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Journal Article
Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates
Miyake, Hiroki, Amari, Koichi, Kimoto, Tsunenobu, Suda, Jun
Published in Japanese Journal of Applied Physics (01.12.2013)
Published in Japanese Journal of Applied Physics (01.12.2013)
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Journal Article
Systematic Investigation of c-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
Suda, Jun, Miyake, Hiroki, Amari, Koichi, Nakano, Yuki, Kimoto, Tsunenobu
Published in Japanese Journal of Applied Physics (01.02.2009)
Published in Japanese Journal of Applied Physics (01.02.2009)
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Journal Article