Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
Tanaka, Atsushi, Matsuhata, Hirofumi, Kawabata, Naoyuki, Mori, Daisuke, Inoue, Kei, Ryo, Mina, Fujimoto, Takumi, Tawara, Takeshi, Miyazato, Masaki, Miyajima, Masaaki, Fukuda, Kenji, Ohtsuki, Akihiro, Kato, Tomohisa, Tsuchida, Hidekazu, Yonezawa, Yoshiyuki, Kimoto, Tsunenobu
Published in Journal of applied physics (07.03.2016)
Published in Journal of applied physics (07.03.2016)
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Journal Article
Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes
Hayashi, Shohei, Yamashita, Tamotsu, Senzaki, Junji, Miyazato, Masaki, Ryo, Mina, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p-i-n diodes
Okada, Aoi, Nishio, Johji, Iijima, Ryosuke, Ota, Chiharu, Goryu, Akihiro, Miyazato, Masaki, Ryo, Mina, Shinohe, Takashi, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
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Journal Article
Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes
Hayashi, Shohei, Yamashita, Tamotsu, Miyazato, Masaki, Miyajima, Masaaki, Senzaki, Junji, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.01.2019)
Published in Japanese Journal of Applied Physics (01.01.2019)
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Journal Article
Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes
Hayashi, Shohei, Naijo, Takanori, Yamashita, Tamotsu, Miyazato, Masaki, Ryo, Mina, Fujisawa, Hiroyuki, Miyajima, Masaaki, Senzaki, Junji, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
Published in Applied physics express (01.08.2017)
Published in Applied physics express (01.08.2017)
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Journal Article
Extension of stacking faults in 4H-SiC pn diodes under a high current pulse stress
Iwahashi, Yohei, Miyazato, Masaki, Miyajima, Masaaki, Yonezawa, Yoshiyuki, Kato, Tomohisa, Fujiwara, Hirokazu, Hamada, Kimimori, Otsuki, Akihiro, Okumura, Hajime
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication
Fujiwara, Takanori, Tanigaki, Yugo, Furukawa, Yukihiro, Tonari, Kazuhiro, Otsuki, Akihiro, Imai, Tomohiro, Oose, Naoyuki, Utsumi, Makoto, Ryo, Mina, Gotoh, Masahide, Nakamata, Shinichi, Sakai, Takao, Sakai, Yoshiyuki, Miyajima, Masaaki, Kumura, Hiroshi, Fukuda, Kenji, Okumura, Hajime
Published in Journal of Photopolymer Science and Technology (01.01.2014)
Published in Journal of Photopolymer Science and Technology (01.01.2014)
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Journal Article
Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer
Tawara, Takeshi, Miyazawa, Tetsuya, Ryo, Mina, Miyazato, Masaki, Fujimoto, Takumi, Takenaka, Kensuke, Matsunaga, Shinichiro, Miyajima, Masaaki, Otsuki, Akihiro, Yonezawa, Yoshiyuki, Kato, Tomohisa, Okumura, Hajime, Kimoto, Tsunenobu, Tsuchida, Hidekazu
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT
Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
SILICON CARBIDE SEMICONDUCTOR DEVICE DRIVING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE DRIVING CIRCUIT
MIYAJIMA MASAAKI, TAKENAKA KENSUKE, FUJIMOTO TAKUMI, TAWARA TAKESHI, TSUCHIDA SHUICHI, MIYASATO MAKI, YONEZAWA YOSHIYUKI, OTSUKI AKIHIRO, RYO MINA
Year of Publication 11.01.2018
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Year of Publication 11.01.2018
Patent
Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Tanaka, Atsushi, Ogata, Syuji, Nakayama, Koji, Hayashi, Toshihiko, Asano, Katsunori, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
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Conference Proceeding