High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process
Mitros, J.C., Chin-Yu Tsai, Shichijo, H., Kunz, M., Morton, A., Goodpaster, D., Mosher, D., Efland, T.R.
Published in IEEE transactions on electron devices (01.08.2001)
Published in IEEE transactions on electron devices (01.08.2001)
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Journal Article
Thickness dependence of stress-induced leakage currents in silicon oxide
Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.C.
Published in IEEE transactions on electron devices (01.06.1997)
Published in IEEE transactions on electron devices (01.06.1997)
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Journal Article
High-voltage drain extended MOS transistors for 0.18-[mu]m logic CMOS process
Mitros, J.C, Tsai, Chin-Yu, Shichijo, H, Kunz, M, Morton, A, Goodpaster, D, Mosher, D, Efland, T.R
Published in IEEE transactions on electron devices (01.08.2001)
Published in IEEE transactions on electron devices (01.08.2001)
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Journal Article
High-voltage drain extended MOS transistors for 0.18-/spl mu/m logic CMOS process
Mitros, J.C., Chin-Yu Tsai, Shichijo, H., Kunz, M., Morton, A., Goodpaster, D., Mosher, D., Efland, T.R.
Published in IEEE transactions on electron devices (01.08.2001)
Published in IEEE transactions on electron devices (01.08.2001)
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Journal Article
Empirical model of MOSFET breakdown voltages
Mitros, J.C.
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.04.1993)
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.04.1993)
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Journal Article
Single Gate EPROM Cell for the End-of-line Ionic Contamination Test
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Conference Proceeding
Thickness dependence of low-level leakages in thin oxides
Gladstone, S.M., Scott, R.S., Runnion, E.F., Hughes, T.W., Dumin, D.J., Mitros, J.C., Lie, L.
Published in Proceedings of 5th International Symposium on the Physical and Failure Analysis of Integrated Circuits (1995)
Published in Proceedings of 5th International Symposium on the Physical and Failure Analysis of Integrated Circuits (1995)
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Conference Proceeding