Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES
Tsutsumi, Tomoya, Goshima, Kazuki, Kirihara, Yoshiharu, Okazaki, Tatsuki, Yasui, Akira, Kakushima, Kuniyuki, Mitani, Yuichiro, Nohira, Hiroshi
Published in Japanese Journal of Applied Physics (01.04.2024)
Published in Japanese Journal of Applied Physics (01.04.2024)
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Journal Article
Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation
Marukame, Takao, Ueyoshi, Kodai, Asai, Tetsuya, Motomura, Masato, Schmid, Alexandre, Suzuki, Masamichi, Higashi, Yusuke, Mitani, Yuichiro
Published in IEEE transactions on circuits and systems. II, Express briefs (01.04.2017)
Published in IEEE transactions on circuits and systems. II, Express briefs (01.04.2017)
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Journal Article
Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model
Higashi, Yusuke, Momo, Nobuyuki, Sasaki, Hiroki, Momose, Hisayo Sasaki, Ohguro, Tatsuya, Mitani, Yuichiro, Ishihara, Takamitsu, Matsuzawa, Kazuya
Published in IEEE transactions on electron devices (01.12.2014)
Published in IEEE transactions on electron devices (01.12.2014)
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Journal Article
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface
Higashi, Yusuke, Takaishi, Riichiro, Kato, Koichi, Suzuki, Masamichi, Nakasaki, Yasushi, Tomita, Mitsuhiro, Mitani, Yuichiro, Matsumoto, Masuaki, Ogura, Shohei, Fukutani, Katsuyuki, Yamabe, Kikuo
Published in Microelectronics and reliability (01.03.2017)
Published in Microelectronics and reliability (01.03.2017)
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Journal Article
Physically unclonable function using initial waveform of ring oscillators on 65 nm CMOS technology
Tanamoto, Tetsufumi, Takaya, Satoshi, Sakamoto, Nobuaki, Kasho, Hirotsugu, Yasuda, Shinichi, Marukame, Takao, Fujita, Shinobu, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article
Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies
Jiezhi Chen, Higashi, Yusuke, Kato, Koichi, Mitani, Yuichiro
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4
NAKASAKI, Yasushi, HIRANO, Izumi, KATO, Koichi, MITANI, Yuichiro
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Journal Article
Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices
Ohba, Ryuji, Mitani, Yuichiro, Sugiyama, Naoharu, Matsumoto, Mari, Fujita, Shinobu
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal--Oxide--Semiconductor Field-Effect Transistors
Masada, Akiko, Hirano, Izumi, Fukatsu, Shigeto, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.07.2010)
Published in Japanese Journal of Applied Physics (01.07.2010)
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Journal Article
Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
Hirano, Izumi, Yamaguchi, Takeshi, Nakasaki, Yasushi, Iijima, Ryosuke, Sekine, Katsuyuki, Takayanagi, Mariko, Eguchi, Kazuhiro, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Journal Article
Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
Hirano, Izumi, Yamaguchi, Takeshi, Nakasaki, Yasushi, Iijima, Ryosuke, Sekine, Katsuyuki, Takayanagi, Mariko, Eguchi, Kazuhiro, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Journal Article
Resistive switching memory using buckybowl sumanene-inserted bilayer graphene
Ashihara, Eito, Kawai, Ryoichi, Ishikawa, Ryousuke, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.04.2024)
Published in Japanese Journal of Applied Physics (01.04.2024)
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Journal Article
Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films
Kobayashi, Takumi, Omata, Haruto, Nakagawa, Kiyokazu, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.04.2024)
Published in Japanese Journal of Applied Physics (01.04.2024)
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Journal Article
Double Junction Tunnel Using Si Nanocrystalline Layer for Nonvolatile Memory Devices
Ohba, Ryuji, Mitani, Yuichiro, Sugiyama, Naoharu, Matsumoto, Mari, Fujita, Shinobu
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article