350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE
Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Journal Article
Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE
Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
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Journal Article
Conference Proceeding
Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE
Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
Get full text
Journal Article