Interface traps density-of-states as a vital component for hot-carrier degradation modeling
Tyaginov, S.E., Starkov, I.A., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, Ch, Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., de Orio, R.L., Selberherr, S.
Published in Microelectronic engineering (02.04.2015)
Published in Microelectronic engineering (02.04.2015)
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Journal Article
Physical modeling of hot-carrier degradation in nLDMOS transistors
Wimmer, Y., Tyaginov, S., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J.-M, Minixhofer, R., Ceric, H., Grasser, T.
Published in 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) (01.10.2014)
Published in 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) (01.10.2014)
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Conference Proceeding
Analysis of hot carrier effects in a 0.35 μm high voltage n-channel LDMOS transistor
Enichlmair, H., Carniello, S., Park, J.M., Minixhofer, R.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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Journal Article
Conference Proceeding
Investigations on the high current behavior of lateral diffused high-voltage transistors
Knaipp, M., Rohrer, G., Minixhofer, R., Seebacher, E.
Published in IEEE transactions on electron devices (01.10.2004)
Published in IEEE transactions on electron devices (01.10.2004)
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Journal Article
A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration
Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Conference Proceeding
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS
Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M.
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors
VESCOLI, V, PARK, J. M, ENICHLMAIR, H, KNAIPP, M, RÖHRER, G, MINIXHOFER, R, SCHREMS, M
Published in IET circuits, devices & systems (01.06.2008)
Published in IET circuits, devices & systems (01.06.2008)
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Journal Article
Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors
Tselios, K., Knobloch, T., Michl, J., Waldhoer, D., Schleich, C., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M.
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
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Conference Proceeding
Thermo-mechanical ball bonding simulation with elasto-plastic parameters obtained from nanoindentation and atomic force measurements
Wright, A., Koffel, S., Kraft, S., Pichler, P., Cambieri, J., Minixhofer, R., Wachmann, E.
Published in 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (01.04.2015)
Published in 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (01.04.2015)
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Conference Proceeding
Optimization of electrothermal material parameters using inverse modeling [polysilicon fuse interconnects]
Minixhofer, R., Holzer, S., Heitzinger, C., Fellner, J., Grasser, T., Selberherr, S.
Published in ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003 (2003)
Published in ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003 (2003)
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Conference Proceeding
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
Tyaginov, S E, Starkov, I A, Triebl, O, Cervenka, J, Jungemann, C, Carniello, S, Park, J M, Enichlmair, H, Karner, M, Kernstock, C, Seebacher, E, Minixhofer, R, Ceric, H, Grasser, T
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
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Conference Proceeding
Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations
Starkov, I A, Tyaginov, S E, Triebl, O, Cervenka, J, Jungemann, C, Carniello, S, Park, J M, Enichlmair, H, Karner, M, Kernstock, C, Seebacher, E, Minixhofer, R, Ceric, H, Grasser, T
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
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Conference Proceeding
A novel simulation methodology for development of ESD primitives on a 0.18µm analog, mixed-signal high voltage process technology
Roger, F., Cambieri, J., Minixhofer, R.
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
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Conference Proceeding
TCAD as an integral part of the semiconductor manufacturing environment
Minixhofer, R.
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
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Conference Proceeding
Effects of sidewall scallops on open tungsten TSVs
Filipovic, L., de Orio, R. L., Selberherr, S., Singulani, A., Roger, F., Minixhofer, R.
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Three-dimensional simulation for the reliability and electrical performance of through-silicon vias
Filipovic, L., Rudolf, F., Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Singulani, A., Minixhofer, R., Selberherr, S.
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2014)
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2014)
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Conference Proceeding
Hot-carrier behaviour and ron-BV trade-off optimization for p-channel LDMOS transistors in a 180 nm HV-CMOS technology
Jong Mun Park, Knaipp, M., Enichlmair, H., Minixhofer, R., Yun Shi, Feilchenfeld, N.
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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Conference Proceeding
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors
Tselios, K, Knobloch, T, Waldhoer, D, Stampfer, B, Ioannidis, E, Enichlmair, H, Minixhofer, R, Grasser, T, Waltl, M
Published in IEEE transactions on device and materials reliability (01.09.2023)
Published in IEEE transactions on device and materials reliability (01.09.2023)
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