Diffusion mechanism of fluorine in plasma processing of III-V semiconductor compounds
Kodama, Y., Zaizen, Y., Minari, H., Cho, Y., Fukasawa, M., Kugimiya, K., Nagaoka, K., Iwamoto, H.
Published in Japanese Journal of Applied Physics (01.06.2020)
Published in Japanese Journal of Applied Physics (01.06.2020)
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Journal Article
High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer
Manda, S., Matsumoto, R., Saito, S., Maruyama, S., Minari, H., Hirano, T., Takachi, T., Fujii, N., Yamamoto, Y., Zaizen, Y., Hirano, T., Iwamoto, H.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
Effects of wavefunction modulation on electron transport in ultrathin-body DG MOSFETs
Mori, N., Minari, H.
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01.01.2008)
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01.01.2008)
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Conference Proceeding
Nano-device simulation from an atomistic view
Mori, N., Mil'nikov, G., Minari, H., Kamakura, Y., Zushi, T., Watanabe, T., Uematsu, M., Itoh, K. M., Uno, S., Tsuchiya, H.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Journal Article
Subband representation in atomistic transport simulation of nanowire transistors
Mil'nikov, G V, Mori, N, Kamakura, Y, Minari, H
Published in 2010 14th International Workshop on Computational Electronics (01.10.2010)
Published in 2010 14th International Workshop on Computational Electronics (01.10.2010)
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Conference Proceeding
(Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method
Minari, Hideki, Yoshida, Shinichi, Sawada, Ken, Nakazawa, Masashi, Caymax, Matty, Merckling, Clement, Waldron, Niamh, Guo, Weiming, Jiang, Sijia, Collaert, Nadine, Simoen, Eddy, Lin, D, Pourtois, Geoffrey
Published in ECS transactions (07.08.2014)
Published in ECS transactions (07.08.2014)
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Journal Article
Effects of atomic disorder on carrier transport in Si nanowire transistors
Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., Mori, N.
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
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Conference Proceeding
Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance
Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., Uno, S., Mori, N.
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
Conference Proceeding
Strain effects on ballistic current in ultrathin DG SOI MOSFETs
Minari, H., Mori, N.
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2008)
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2008)
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Conference Proceeding
Atomic disorder effects on electronic states in InAs/GaAs intermediate-band solar cells
Takahashi, H., Minari, H., Mori, N.
Published in 2012 IEEE International Meeting for Future of Electron Devices, Kansai (01.05.2012)
Published in 2012 IEEE International Meeting for Future of Electron Devices, Kansai (01.05.2012)
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Conference Proceeding
Simulation of the effect of arsenic discrete distribution on device characteristics in silicon nanowire transistors
Uematsu, M., Itoh, K. M., Mil'nikov, G., Minari, H., Mori, N.
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
Tailoring the electronic properties of vertically stacked quantum-dots by local potential modulation
Takahashi, H., Minari, H., Mori, N.
Published in 2011 International Meeting for Future of Electron Devices (01.05.2011)
Published in 2011 International Meeting for Future of Electron Devices (01.05.2011)
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Conference Proceeding
Effects of a strained layer on transport characteristics of tunnel transistors
Yamamoto, M., Kitayama, T., Minari, H., Mori, N.
Published in 2011 International Meeting for Future of Electron Devices (01.05.2011)
Published in 2011 International Meeting for Future of Electron Devices (01.05.2011)
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Conference Proceeding
Quantum transport and electron-phonon interaction in nanoscale MOSFETs
Mori, N, Minari, H, Mil'nikov, G, Kamakura, Y
Published in 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (01.11.2010)
Published in 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (01.11.2010)
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Conference Proceeding