Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs
Schmidt, Matthias, Schafer, Anna, Minamisawa, Renato A., Buca, Dan, Trellenkamp, Stefan, Hartmann, Jean-Michel, Qing-Tai Zhao, Mantl, Siegfried
Published in IEEE electron device letters (01.07.2014)
Published in IEEE electron device letters (01.07.2014)
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Journal Article
Oxide Reliability of Gate Biased Trench Si-IGBTs Irradiated with Protons and Neutrons
Spejo, Lucas B., Rehm, Silvan, Novak, Vladimir, Ammann, Benedict, Wursch, Philippe, Stark, Roger, Knoll, Lars, Schulz, Nicola, Minamisawa, Renato A.
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Estimation of Energy-Saving Potential Using Commercial SiC Power Converters
Spejo, Lucas Barroso, Thekemuriyil, Tanya, Minamisawa, Renato Amaral
Published in Energies (Basel) (01.09.2024)
Published in Energies (Basel) (01.09.2024)
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Journal Article
Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid
Rahimo, Munaf, Canales, Francisco, Minamisawa, Renato Amaral, Papadopoulos, Charalampos, Vemulapati, Umamaheswara, Mihaila, Andrei, Kicin, Slavo, Drofenik, Uwe
Published in IEEE transactions on power electronics (01.09.2015)
Published in IEEE transactions on power electronics (01.09.2015)
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Journal Article
A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs
Schmidt, Matthias, Suess, Martin J., Barros, Angelica D., Geiger, Richard, Sigg, Hans, Spolenak, Ralph, Minamisawa, Renato A.
Published in IEEE electron device letters (01.03.2014)
Published in IEEE electron device letters (01.03.2014)
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Journal Article
Life-cycle energy demand comparison of medium voltage Silicon IGBT and Silicon Carbide MOSFET power semiconductor modules in railway traction applications
Spejo, Lucas Barroso, Akor, Innocent, Rahimo, Munaf, Minamisawa, Renato Amaral
Published in Power electronic devices and components (01.10.2023)
Published in Power electronic devices and components (01.10.2023)
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Journal Article
High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
Schöner, Adolf, Knoll, Lars, Minamisawa, Renato A., Afanasyev, Alexey V., Alfieri, Giovanni, Mikhaylov, Aleksey I., Reshanov, Sergey A., Luchinin, Victor V., Bartolf, Holger
Published in Materials science forum (24.05.2016)
Published in Materials science forum (24.05.2016)
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Journal Article
Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures
Knoll, Lars, Sundaramoorthy, Vinoth, Kranz, Lukas, Minamisawa, Renato Amaral, Alfieri, Giovanni
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC
Fedeli, P., Puzzanghera, M., Moscatelli, F., Minamisawa, R. A., Alfieri, G., Grossner, U., Nipoti, R.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Energy saving potential of WBG-commercial power converters in different applications
Spejo, Lucas B., Nonis, Erik, Schulz, Nicola, Minamisawa, Renato A.
Published in 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) (04.09.2023)
Published in 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) (04.09.2023)
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Conference Proceeding
Characterization of nanopores in PFA thin films
Minamisawa, Renato Amaral, Zimmerman, Robert Lee, Ila, Daryush
Published in Surface & coatings technology (15.06.2009)
Published in Surface & coatings technology (15.06.2009)
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Journal Article
Conference Proceeding
On the influence of active area design on the performance of SiC JBS diodes
Mihaila, A., Minamisawa, R. A., Knoll, L., Sundaramoorthy, V. K., Bianda, E., Bartolf, H., Alfieri, G., Rahimo, M.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Feedback-controlled ion beam system for nanoporous membrane fabrication
Minamisawa, Renato Amaral, Zimmerman, Robert Lee, Ila, Daryush
Published in Surface & coatings technology (15.06.2009)
Published in Surface & coatings technology (15.06.2009)
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Journal Article
Conference Proceeding
Tailoring the 4H-SiC/SiO2 MOS-interface for SiC-based power switches
Mikhaylov, Aleksey I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, Sergey A., Schöner, Adolf, Knoll, Lars, Minamisawa, Renato A., Alfieri, Giovanni, Bartolf, Holger
Published in Japanese Journal of Applied Physics (30.06.2016)
Published in Japanese Journal of Applied Physics (30.06.2016)
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Journal Article
Interface Trap Density of Commercial 1.7 kV SiC Power MOSFETs
Spejo, Lucas B., Lucidi, Samuel, Puydinger Dos Santos, Marcos V., Diniz, Jose A., Minamisawa, Renato A.
Published in 2023 37th Symposium on Microelectronics Technology and Devices (SBMicro) (28.08.2023)
Published in 2023 37th Symposium on Microelectronics Technology and Devices (SBMicro) (28.08.2023)
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Conference Proceeding
Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
Knoll, Lars, Minamisawa, Renato Amaral, Bartolf, Holger, Mikhaylov, A.I., Schöner, Adolf, Alfieri, Giovanni, Luchinin, V.V., Reshanov, Sergey A., Afanasyev, Alexey V.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer
Schöner, Adolf, Minamisawa, Renato Amaral, Bartolf, Holger, Alfieri, Giovanni, Afanasyev, Alexey V., Mikhaylov, A.I., Knoll, Lars, Reshanov, Sergey A., Luchinin, Victor V.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Short-circuit robustness of retrograde channel doping 1.2 kV SiC MOSFETs
Diaz Reigosa, Paula, Schulz, Nicola, Minamisawa, Renato
Published in Microelectronics and reliability (01.05.2021)
Published in Microelectronics and reliability (01.05.2021)
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Journal Article