Search Results - "Min, Hong Shick" :: K.UTB vyhledávací portál

Statistical Noise Analysis of CMOS Image Sensors in Dark Condition

by Woo, Jun-Myung, Park, Hong-Hyun, Hong, Sung-Min, Chung, In-Young, Min, Hong Shick, Park, Young June
Published in IEEE transactions on electron devices (01.11.2009)

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A new charge pump without degradation in threshold voltage due to body effect [memory applications]

by Shin, Jongshin, Chung, In-Young, Park, Young June, Min, Hong Shick
Published in IEEE journal of solid-state circuits (01.08.2000)

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Prediction of data retention time distribution of DRAM by physics-based statistical Simulation

by Seonghoon Jin, Jeong-Hyong Yi, Jae Hoon Choi, Dae Gwan Kang, Park, Y.J., Hong Shick Min
Published in IEEE transactions on electron devices (01.11.2005)

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A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor

by Lee, Myoung Jin, Jin, Seonghoon, Baek, Chang-Ki, Hong, Sung-Min, Park, Soo-Young, Park, Hong-Hyun, Lee, Sang-Don, Chung, Sung-Woong, Jeong, Jae-Goan, Hong, Sung-Joo, Park, Sung-Wook, Chung, In-Young, Park, Young June, Min, Hong Shick
Published in IEEE transactions on electron devices (01.12.2007)

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Physics-Based Analysis and Simulation of Phase Noise in Oscillators

by HONG, Sung-Min, CHAN HYEONG PARK, HONG SHICK MIN, YOUNG JUNE PARK
Published in IEEE transactions on electron devices (01.09.2006)

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A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAM

by JIN, Seonghoon, MYOUNG JIN LEE, YI, Jeong-Hyong, JAE HOON CHOI, DAE GWAN KANG, CHUNG, In-Young, YOUNG JUNE PARK, HONG SHICK MIN
Published in IEEE transactions on electron devices (01.09.2006)

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Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

by Jeong-Hyong Yi, Sung-Kye Park, Park, Y.-J., Hong Shick Min
Published in IEEE transactions on electron devices (01.04.2005)

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A new weight redistribution technique for electron-electron scattering in the MC simulation

by Jongchol Kim, Hyungsoon Shin, Chanho Lee, Park, Y.J., Hong Shick Min
Published in IEEE transactions on electron devices (01.09.2004)

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Partial SOI type isolation for improvement of DRAM cell transistor characteristics

by Myoung Jin Lee, Jun Hee Cho, Sang Don Lee, Jin Hong Ahn, Jin Woong Kim, Sung Wook Park, Park, Y.J., Hong Shick Min
Published in IEEE electron device letters (01.05.2005)

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An anomalous device degradation of SOI narrow width devices caused by STI edge influence

by Lee, Hyeokjae, Lee, Jong-Ho, Shin, Hyungsoon, Park, Young-June, Min, Hong Shick
Published in IEEE transactions on electron devices (01.04.2002)

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Electron mobility behavior in extremely thin SOI MOSFET's

by Choi, Jin-Hyeok, Park, Young-June, Min, Hong-Shick
Published in IEEE electron device letters (01.11.1995)

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A novel bipolar imaging device - BASIC (BAse stored imager in CMOS Process)

by Youn-Jae Kook, Jun-Ho Cheon, Jong-Ho Lee, Park, Y.-J., Hong-Shick Min
Published in IEEE transactions on electron devices (01.11.2003)

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Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits

by Wee, Jae-Kyung, Park, Young-June, Min, Hong-Shick, Cho, Dae-Hyung, Seung, Man-Ho, Park, Hun-Sug
Published in IEEE transactions on microwave theory and techniques (01.10.1998)

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Statistical analysis of random telegraph noise in CMOS image sensors

by Jun-Myung Woo, Hong-Hyun Park, Hong Shick Min, Young June Park, Sung-Min Hong, Chan Hyeong Park
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2008)

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A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

by JEON, Jooyoung, KWON, Youngwoo, MIN, Hong-Shick
Published in IEEE microwave and wireless components letters (01.09.2002)

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Investigation of noise in silicon nanowire transistors through quantum simulations

by Hong-Hyun Park, Soo Young Park, Hong Shick Min, Young June Park, Seonghoon Jin
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2008)

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Characterization issues of gate geometry in multifinger structure for RF-SOI MOSFETs

by Lee, Hyeokjae, Lee, Jong-Ho, Park, Young June, Min, Hong Shick
Published in IEEE electron device letters (01.05.2002)

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Physics-Based Analysis and Simulation of 1/f Noise in MOSFETs Under Large-Signal Operation

by HONG, Sung-Min, CHAN HYEONG PARK, YOUNG JUNE PARK, HONG SHICK MIN
Published in IEEE transactions on electron devices (01.05.2010)

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Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

by Lee, Hyeokjae, Lee, Jong-Ho, Shin, Hyungsoon, Park, Young June, Min, Hong Shick
Published in IEEE electron device letters (01.09.2001)

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$Physics-Based Analysis and Simulation of \hbox/f Noise in MOSFETs Under Large-Signal Operation$

Physics-Based Analysis and Simulation of \hbox/f Noise in MOSFETs Under Large-Signal Operation

by Hong, Sung-Min, Park, Chan Hyeong, Park, Young June, Min, Hong Shick
Published in IEEE transactions on electron devices (01.05.2010)

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