The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure
Miczek, Marcin, Bidziński, Piotr, Adamowicz, Bogusława, Mizue, Chihoko, Hashizume, Tamotsu
Published in Solid state communications (01.06.2011)
Published in Solid state communications (01.06.2011)
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Journal Article
Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection
Bidzinski, Piotr, Miczek, Marcin, Adamowicz, Boguslawa, Mizue, Chihoko, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection
Bidzinski, Piotr, Miczek, Marcin, Adamowicz, Boguslawa, Mizue, Chihoko, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO 2 surface and near‐surface region
Izydorczyk, Weronika, Adamowicz, Boguslawa, Miczek, Marcin, Waczynski, Krzysztof
Published in Physica status solidi. A, Applications and materials science (01.07.2006)
Published in Physica status solidi. A, Applications and materials science (01.07.2006)
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Journal Article
Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2 surface and near-surface region
Izydorczyk, Weronika, Adamowicz, Boguslawa, Miczek, Marcin, Waczynski, Krzysztof
Published in Physica status solidi. A, Applications and materials science (01.07.2006)
Published in Physica status solidi. A, Applications and materials science (01.07.2006)
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Journal Article
Conference Proceeding
UV-Induced Variation of Interface Potential in AlO x /n-GaN Structure
Mizue, Chihoko, Miczek, Marcin, Kotani, Junji, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.02.2009)
Published in Japanese Journal of Applied Physics (01.02.2009)
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Journal Article
Temperature-Dependent Interface-State Response in an Al 2 O 3 /n-GaN Structure
Ooyama, Kimihito, Kato, Hiroki, Miczek, Marcin, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.07.2008)
Published in Japanese Journal of Applied Physics (01.07.2008)
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Journal Article