Normally-Off GaN HFET Based on Layout and Stress Engineering
Hiu Yung Wong, Braga, Nelson, Mickevicius, R. V.
Published in IEEE electron device letters (01.12.2016)
Published in IEEE electron device letters (01.12.2016)
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Journal Article
Design space and origin of off-state leakage in GaN vertical power diodes
Zhang, Y., Wong, H.-Y, Sun, M., Joglekar, S., Yu, L., Braga, N. A., Mickevicius, R. V., Palacios, T.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Normally-OFF dual-gate Ga2O3 planar MOSFET and FinFET with high ION and BV
Wong, H. Y., Braga, N., Mickevicius, R. V., Ding, F.
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation
Hiu Yung Wong, Braga, Nelson, Mickevicius, R. V., Jie Liu
Published in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (01.11.2015)
Published in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (01.11.2015)
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Conference Proceeding
The Impact of Defects on GaN Device Behavior: Modeling Dislocations, Traps, and Pits
Moroz, Victor, Wong, Hiu Yung, Choi, Munkang, Braga, Nelson, Mickevicius, R. V., Zhang, Yuhao, Palacios, Thomas
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
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Journal Article
Study of AlGaN/GaN HEMT degradation through TCAD simulations
Wong, Hiu Y., Braga, Nelson, Mickevicius, R. V., Feng Gao, Palacios, Tomas
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2014)
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2014)
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Conference Proceeding
(Invited) Power Loss Reduction in Perforated-Channel HFET Switches
Shur, Michael, Gaevski, Mikhail, Gaska, Remis, Simin, Grigory, Wong, Hugh Yung, Braga, Nelson, Mickevicius, Rimvydas
Published in ECS transactions (13.04.2015)
Published in ECS transactions (13.04.2015)
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Journal Article
Quantum correction in AlGaN/GaN transistor simulations using Modified Local Density Approximation (MLDA)
Hiu Yung Wong, Penzin, Oleg, Braga, Nelson, Mickevicius, R. V.
Published in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.08.2016)
Published in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.08.2016)
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Conference Proceeding