Characteristics of C3F7CN/CO2 as an alternative to SF6 in HVDC-GIL systems
Cong Wang, Yi Cheng, Youping Tu, Geng Chen, Zhikang Yuan, Ang Xiao, Owens, John, Zhang, Agnes, Mi, Nathan
Published in IEEE transactions on dielectrics and electrical insulation (01.08.2018)
Published in IEEE transactions on dielectrics and electrical insulation (01.08.2018)
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Journal Article
Characteristics of C 3 F 7 CN/CO 2 as an alternative to SF 6 in HVDC-GIL systems
Cong Wang, Yi Cheng, Youping Tu, Geng Chen, Zhikang Yuan, Ang Xiao, Owens, John, Zhang, Agnes, Mi, Nathan
Published in IEEE transactions on dielectrics and electrical insulation (01.08.2018)
Published in IEEE transactions on dielectrics and electrical insulation (01.08.2018)
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Journal Article
Magnetism in n-type GaMnN grown by molecular beam epitaxy
Van Nostrand, J. E., Albrecht, J. D., Claflin, B., Liu, Y., Nathan, M. I., Ruden, P. P.
Published in Physica Status Solidi (b) (01.12.2005)
Published in Physica Status Solidi (b) (01.12.2005)
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Conference Proceeding
Electrical and magnetic characteristics of MBE-grown GaMnN
ALBRECHT, J. D, VAN NOSTRAND, J. E, CLAFLIN, B, LIU, Y, NATHAN, M. I, RUDEN, P. P
Published in Journal of superconductivity (01.02.2005)
Published in Journal of superconductivity (01.02.2005)
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Conference Proceeding
A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts
FUNG, A. K, BORTON, J. E, NATHAN, M. I, VAN HOVE, J. M, HICKMAN, R. II, CHOW, P. P, WOWCHAK, A. M
Published in Journal of electronic materials (01.05.1999)
Published in Journal of electronic materials (01.05.1999)
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Journal Article
Direct-Schottky-contact InP MESFET
Abid, Z., Gopinath, A., Williamson, F., Nathan, M.I.
Published in IEEE electron device letters (01.06.1991)
Published in IEEE electron device letters (01.06.1991)
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Journal Article
A low-gate-leakage-current GaAs MESFET with a thin epitaxial silicon layer
Costa, J.C., Miller, T.J., Abid, Z., Williamson, F., Bernhardt, B.A., Nathan, M.I.
Published in IEEE electron device letters (01.06.1991)
Published in IEEE electron device letters (01.06.1991)
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Journal Article
Excess current in n+GaAs-AlxGa1-xAs-nGaAs heterojunctions
LU, S. S, LEE, K. R, LEE, K. H, NATHAN, M. I, HEIBLUM, M, WRIGHT, S. L
Published in Surface science (01.04.1990)
Published in Surface science (01.04.1990)
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Conference Proceeding
Journal Article
Importance of boundary conditions to conduction in short samples
Rosenberg, J.J., Yoffa, E.J., Nathan, M.I.
Published in IEEE transactions on electron devices (01.08.1981)
Published in IEEE transactions on electron devices (01.08.1981)
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Journal Article