Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
Sobolev, N. A., Kalyadin, A. E., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Parshin, E. O., Melesov, N. S., Simakin, C. G.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2019)
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Journal Article
Analyzing Products of the Electrochemical Exfoliation of Graphite via Rutherford Backscattering Spectrometry and X-Ray Diffractometry
Savinsky, N. G., Melesov, N. S., Parshin, E. O., Vasiliev, S. V., Bachurin, V. I., Churilov, A. B.
Published in Bulletin of the Russian Academy of Sciences. Physics (01.06.2020)
Published in Bulletin of the Russian Academy of Sciences. Physics (01.06.2020)
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Journal Article
Study of Multilayer Thin Film Structures by Rutherford Backscattering Spectrometry
Bachurin, V. I., Melesov, N. S., Parshin, E. O., Rudy, A. S., Churilov, A. B.
Published in Technical physics letters (01.06.2019)
Published in Technical physics letters (01.06.2019)
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Journal Article
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
Sobolev, N. A., Aleksandrov, O. V., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Kalyadin, A. E., Parshin, E. O., Melesov, N. S.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2019)
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Journal Article
Depth Profiling of Layered Si−O−Al Thin Films with Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry
Bachurin, V. I., Melesov, N. S., Mironenko, A. A., Parshin, E. O., Rudy, A. S., Simakin, S. G., Churilov, A. B.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.03.2019)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.03.2019)
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Journal Article