Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel
Magari, Yusaku, Aman, S G Mehadi, Koretomo, Daichi, Masuda, Kentaro, Shimpo, Kenta, Furura, Mamoru
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Heterojunction channel engineering to enhance performance and reliability of amorphous In-Ga-Zn-O thin-film transistors
Furuta, Mamoru, Koretomo, Daichi, Magari, Yusaku, Aman, S G Mehadi, Higashi, Ryunosuke, Hamada, Shuhei
Published in Japanese Journal of Applied Physics (01.09.2019)
Published in Japanese Journal of Applied Physics (01.09.2019)
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Journal Article
Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In-Ga-Zn-O Thin-Film Transistors
Aman, S. G. Mehadi, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru
Published in IEEE transactions on electron devices (01.08.2018)
Published in IEEE transactions on electron devices (01.08.2018)
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Journal Article
Hydrogenated In-Ga-Zn-O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices
Kono, Syuya, Magari, Yusaku, Mori, Marin, Aman, S. G. Mehadi, Fruehauf, Norbert, Furuta, Hiroshi, Furuta, Mamoru
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Journal Article
Layer Reduction of Hybrid TFT Towards 6.6 inch AMOLED Mass Production
Kobayashi, Shunsuke, Takeda, Yujiro, Honjyo, Masatomo, Aman, Mehadi, Kitoh, Kenichi, Ito, Kazuatsu, Tanaka, Kohei, Matsukizono, Hiroshi
Published in Proceedings of the International Display Workshops (16.12.2022)
Published in Proceedings of the International Display Workshops (16.12.2022)
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Journal Article
Development of high mobility top gate IGZO-TFT for Automotive OLED display
Takeda, Yujiro, Mehadi, Aman, Murashige, Shogo, Ito, Kazuatsu, Ishida, Izumi, Nakajima, Shinji, Matsukizono, Hiroshi, Makita, Naoki
Published in Proceedings of the International Display Workshops (29.11.2019)
Published in Proceedings of the International Display Workshops (29.11.2019)
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Journal Article
Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–G–Zn–O Thin-Film Transistors
Mehadi Aman, S G, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
Development of high mobility top gate IGZO-TFT for Automotive OLED display
Takeda, Yujiro, Mehadi, Aman, Murashige, Shogo, Ito, Kazuatsu, Ishida, Izumi, Nakajima, Shinji, Matsukizono, Hiroshi, Makita, Naoki
Published in Proceedings of the International Display Workshops (29.11.2019)
Published in Proceedings of the International Display Workshops (29.11.2019)
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Journal Article
High Performance TFTs with IGZO and LTPS Hybrid Structure for AMOLED Display
Murashige, Shogo, Aman, Mehadi, Takeda, Yujiro, Ishida, Izumi, Sano, Masahito, Yamamoto, Kaoru, Ito, Kazuatsu, Tanaka, Kohei, Matsukizono, Hiroshi
Published in Proceedings of the International Display Workshops (01.12.2021)
Published in Proceedings of the International Display Workshops (01.12.2021)
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Journal Article
(Invited) Low-Temperature Activation Method for InGaZnO x Thin-Film Transistors
Furuta, Mamoru, Mehadi, Aman S G, Magari, Yusaku, Daichi, Koretomo
Published in Meeting abstracts (Electrochemical Society) (23.07.2018)
Published in Meeting abstracts (Electrochemical Society) (23.07.2018)
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Journal Article
Influence of Deposition Temperature and Source Gas in PE-CVD for SiO 2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors
Aman, S. G. Mehadi, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru
Published in IEEE transactions on electron devices (01.08.2018)
Published in IEEE transactions on electron devices (01.08.2018)
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Journal Article
Low temperature processes for metal-oxide thin film transistors
Fruehauf, Norbert, Herrmann, Marcus, Baur, Holger, Aman, Mehadi
Published in 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (01.07.2015)
Published in 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (01.07.2015)
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Conference Proceeding
Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al 2 O 3 gate insulator for flexible devices
Kono, Syuya, Magari, Yusaku, Mori, Marin, Aman, S. G. Mehadi, Fruehauf, Norbert, Furuta, Hiroshi, Furuta, Mamoru
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Journal Article
Effect of Deposition Temperature and Source Gas Chemistry in PE-CVD SiO2 Passivation on InGaZnO TFTs
Aman, S G Mehadi, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru
Published in 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (01.07.2018)
Published in 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (01.07.2018)
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Conference Proceeding