GaN-based power devices: Physics, reliability, and perspectives
Meneghini, Matteo, De Santi, Carlo, Abid, Idriss, Buffolo, Matteo, Cioni, Marcello, Khadar, Riyaz Abdul, Nela, Luca, Zagni, Nicolò, Chini, Alessandro, Medjdoub, Farid, Meneghesso, Gaudenzio, Verzellesi, Giovanni, Zanoni, Enrico, Matioli, Elison
Published in Journal of applied physics (14.11.2021)
Published in Journal of applied physics (14.11.2021)
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Journal Article
Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate
Elwaradi, Reda, Mehta, Jash, Ngo, Thi Huong, Nemoz, Maud, Bougerol, Catherine, Medjdoub, Farid, Cordier, Yvon
Published in Journal of applied physics (14.04.2023)
Published in Journal of applied physics (14.04.2023)
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Journal Article
Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template
Bassaler, Julien, Comyn, Rémi, Bougerol, Catherine, Cordier, Yvon, Medjdoub, Farid, Ferrandis, Philippe
Published in Journal of applied physics (28.03.2022)
Published in Journal of applied physics (28.03.2022)
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Journal Article
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
Lu, Jun, Chen, Jr-Tai, Dahlqvist, Martin, Kabouche, Riad, Medjdoub, Farid, Rosen, Johanna, Kordina, Olof, Hultman, Lars
Published in Applied physics letters (25.11.2019)
Published in Applied physics letters (25.11.2019)
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Journal Article
Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes
Hamdaoui, Youssef, Abid, Idriss, Michler, Sondre, Ziouche, Katir, Medjdoub, Farid
Published in Applied physics express (01.12.2023)
Published in Applied physics express (01.12.2023)
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Journal Article
Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
Harrouche, Kathia, Venkatachalam, Srisaran, Ben-Hammou, Lyes, Grandpierron, François, Okada, Etienne, Medjdoub, Farid
Published in Micromachines (Basel) (22.01.2023)
Published in Micromachines (Basel) (22.01.2023)
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Journal Article
Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors
Abid, Idriss, Hamdaoui, Youssef, Mehta, Jash, Derluyn, Joff, Medjdoub, Farid
Published in Micromachines (Basel) (01.09.2022)
Published in Micromachines (Basel) (01.09.2022)
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Journal Article
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
Tajalli, Alaleh, Meneghini, Matteo, Besendörfer, Sven, Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio
Published in Materials (25.09.2020)
Published in Materials (25.09.2020)
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Journal Article
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
Abid, Idriss, Kabouche, Riad, Bougerol, Catherine, Pernot, Julien, Masante, Cedric, Comyn, Remi, Cordier, Yvon, Medjdoub, Farid
Published in Micromachines (Basel) (12.10.2019)
Published in Micromachines (Basel) (12.10.2019)
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Journal Article
GaN-Based Laser Wireless Power Transfer System
De Santi, Carlo, Meneghini, Matteo, Caria, Alessandro, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, Farid, Kalinic, Boris, Cesca, Tiziana, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in Materials (17.01.2018)
Published in Materials (17.01.2018)
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Journal Article
Evidence of optically induced degradation in gallium nitride optoelectronic devices
De Santi, Carlo, Caria, Alessandro, Renso, Nicola, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, Farid, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Applied physics express (01.11.2018)
Published in Applied physics express (01.11.2018)
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Journal Article
Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
Medjdoub, Farid, Zegaoui, Malek, Grimbert, Bertrand, Rolland, Nathalie, Rolland, Paul-Alain
Published in Applied physics express (01.12.2011)
Published in Applied physics express (01.12.2011)
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Journal Article
High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure
Medjdoub, Farid, Kabouche, Riad, Linge, Astrid, Grimbert, Bertrand, Zegaoui, Malek, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, di Forte-Poisson, Marie-Antoinette
Published in Applied physics express (01.10.2015)
Published in Applied physics express (01.10.2015)
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Journal Article
Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate
Medjdoub, F., Waldhoff, N., Zegaoui, M., Grimbert, B., Rolland, N., Rolland, P. A.
Published in IEEE electron device letters (01.09.2011)
Published in IEEE electron device letters (01.09.2011)
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Journal Article
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendörfer, Sven, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio
Published in Micromachines (Basel) (17.01.2020)
Published in Micromachines (Basel) (17.01.2020)
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Journal Article
High structural quality InGaN/GaN multiple quantum well solar cells
Dogmus, Ezgi, Zegaoui, Malek, Largeau, Ludovic, Tchernycheva, Maria, Neplokh, Vladimir, Weiszer, Saskia, Schuster, Fabian, Stutzmann, Martin, Foldyna, Martin, Medjdoub, Farid
Published in Physica status solidi. C (01.12.2015)
Published in Physica status solidi. C (01.12.2015)
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Journal Article
High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs
Medjdoub, Farid, Kabouche, Riad, Dogmus, Ezgi, Linge, Astrid, Zegaoui, Malek
Published in Electronics (Basel) (18.03.2016)
Published in Electronics (Basel) (18.03.2016)
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Journal Article