Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode
Hamzah, Nur Atiqah, Ahmad, Mohd Anas, Mohd Asri, Rahil Izzati, Alias, Ezzah Azimah, Md Sahar, Mohd Ann Amirul Zulffiqal, Sha Shiong, Ng, Hassan, Zainuriah
Published in Microelectronics international (02.09.2021)
Published in Microelectronics international (02.09.2021)
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Journal Article
Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate
Md Sahar, Mohd Ann Amirul Zulffiqal, Hassan, Zainuriah, Ng, Sha Shiong, Hamzah, Nur Atiqah
Published in Materials science in semiconductor processing (15.03.2023)
Published in Materials science in semiconductor processing (15.03.2023)
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Journal Article
Rapid Thermal Annealing Process Toward Enhancement of ITO Thin Films
Md. Sahar, Mohd Ann Amirul Zulffiqal, Hassan, Zainuriah, Ahmad, Mohd Anas, Abdullah, Mundzir, Mohd Asri, Rahil Izzati, Hamzah, Nur Atiqah, Che Seliman, Muhd Azi
Published in Key engineering materials (25.05.2023)
Published in Key engineering materials (25.05.2023)
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Journal Article
Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures
Hamzah, Nur Atiqah, Md Sahar, Mohd Ann Amirul Zulffiqal, Tan, Aik Kwan, Ahmad, Mohd Anas, Abdul Malik, Muhammad Fadhirul Izwan, Loo, Chin Chyi, Chang, Wei Sea, Ng, Sha Shiong
Published in Microelectronics international (02.01.2023)
Published in Microelectronics international (02.01.2023)
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Journal Article
Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes
Md Sahar, Mohd Ann Amirul Zulffiqal, Hassan, Zainuriah, Ng, Sha Shiong, Lim, Way Foong, Lau, Khai Shenn, Alias, Ezzah Azimah, Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Mohd Asri, Rahil Izzati
Published in Microelectronics international (02.09.2021)
Published in Microelectronics international (02.09.2021)
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Journal Article